Indium Oxide Transparent Conductive Film Preparation And Its Performance Study

The transparent conductive film is a high transmittance, high conductivity. materials,which are widely used in flat panel displays, solar cells, touch screen and other photonics devices and so on,due to its special features.With the advancement of technology and the improvement of living standards of the people, the requirements of the optical and electrical properties of the transparent conductive film is also increasing. On the basis of previous researches, we take further work on how to reduce the material resistivity. The main viscera are as follows:1.Make target by myself through solid-phase sintering method: For the preparation of thin films in our experiment is the pulsed laser deposition (PLD). which requires solid target.And the films prepared by PLD method have the same composition with the target.So it is a important step of our study.By the Preparation of germanium-doped indium oxide target, we demonstrate the process of target preparation. The temperature and the ratio of target direct affect the electrical and crystal properties of our target. We identified the best sintering temperature and the best ratio of germanium-doped indium oxide target successfully And prepared the excellent ITO:Mo and InSnNbMo target.2.By ourselves’ ITO: Mo target we prepared high-performance transparent conductive film by PLD method successfully.According to our study of how substrate temperature affected the electrical and crystal properties,we find that500℃is the best temperature to grow IT0:Mo thin films. And the best film can dropped the resistivity to2.611×10-4Ω·cm with the visible light transmittance greater than90%.3.Studied the influence of film thickness to the light transmittance and conductivity of the ITO:Mo films. And concluded that: When the film thickness is low. the influence of interface scattering on the resistivity are significant, but when the film thickness is large the film thickness is no longer the main factor affecting film resistivity. The absorption coefficient a of ITO: Mo films is small,and the films with not too large thickness could meet the requirements easily. The conclusion is that the best thickness to grown ITO: Mo thin films ranges from14()nm to300nm.4.We prepared InSnNbMo films ceramic successfully by PLD method with the target prepared by ourselves. We also studied the influence of substrate temperature to the properties of the InSnNbMo films during the growth of the films, concluded that:the film grown at500C have the best comprehensive poperities.The best film could rech the resistivity:2.23X10-4Ω cm, with an average transmissivity of nearly90%in the visible light range.