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In Tio < Sub > 2 < / Sub > Surface Intermittent Pulse Deposition Cu < Sub > 2 < / Sub > O Particles And Photoelectrochemical Properties

Posted on:2013-06-09Degree:MasterType:Thesis
Country:ChinaCandidate:L ZhaoFull Text:PDF
GTID:2241330371493899Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
Cuprous oxide (Cu2O), a direct band gap semiconductor, shows many importantcharacteristics useful for photocatalytic, electrochromic, solar energy cells andphotoelectrochemical applications, including abundant availability, narrow band-gap, andnontoxicity. In addition, Cu2O is usually a p-type semiconductor with band gap around1.92.2eV, and thus can be used to form heterojunctions with other n-type semiconductorshaving wide band-gap. The heterostructure of titanium oxide (TiO2) combined with Cu2Oparticles has been studied and significant enhancement of photo-current conversion and/orphotocatalytic efficiency has been observed by various research groups. However, thestudy as to the controllable growth of the Cu2O particles is missing when they areelectrodeposited onto TiO2surface. In addition, the study on the stability of the Cu2Oparticle during photoelectrochemical (PEC) reaction is also lack. In this study, weelectrodeposited Cu2O particles on TiO2flat surface using a special interruptedpulse-electrodeposition method to get modulated particle size and density. The flat Tisubstrate with thermal oxidized TiO2layer is used in this study, so that we canconveniently observe the microstructural and morphological evolution of the Cu2Oparticles during the growth or after the PEC reactions.The effect of the growth parameters, including the times of interruptions (periods) andpulse number and height within one period on the morphology, microstructure and PECproperties of the Cu2O particles is investigated in detail. The photocurrent of theCu2O/TiO2heterostructure under zero bias increases significantly compared to that of thepure TiO2layer. We get the highest photocurrent when6-period interrupted deposition isused, corresponding to the highest density for the single Cu2O particles on the TiO2surface.However, more deposition periods than6have negative effects on the photocurrent of theCu2O/TiO2heterostructure. Above6-period, Cu2O particles cover fully the TiO2surfacealong with the stacked Cu2O particle structure. Such stacked structure makes the lightabsorption less efficient on the Cu2O/TiO2contact region and leads to the decreased photocurrent. We also find that the photocurrent of the Cu2O/TiO2heterostructure underzero bias decreases obviously during the PEC measurement, and then the stability of theCu2O particles during the PEC reaction is studied. The transformation of Cu2O to Cu isobserved, along with the stabilized photocurrent. Compared with the pure TiO2layer on Tisubstrate, large enhancement of the PEC activity is presented after Cu2O or Cu particlesare covered on TiO2surface and different mechanisms behind the enhancement areproposed in this thesis.The stability of the electrodeposited Cu2O particles on TiO2is further studied. We gettwo cathodic peaks from the cyclic voltammogram (CV) of a bare TiO2/Ti electrode inCu(NO3)2solution, which correspond to Cu2+to Cu+and Cu+to Cu transitions, respectively.Cu2O and Cu nanoparticles is deposited via electroreduction of Cu2+to Cu+and Cu+to Cuat proper negative potentials, separately. We find that the Cu2O nanoparticles deposited at aelectroreduction potential on TiO2possess a excellent PEC performance due to a large areaof (111) facets. The photocurrent of Cu2O/TiO2heterojunctions is more stable anddecreasing slowly during the PEC test. Compared with Cu particles transformed fromCu2O particles by applied negative voltage, large enhancement of the PEC activity ispresented for the Cu particles deposited on the TiO2surface using a electroreductionpotential directly and the short-circuit photocurrent density of Cu/TiO2film is more than21times that of the pure TiO2film.
Keywords/Search Tags:interrupted pulse-electrodeposition method, Cu2O/TiO2, Cu/TiO2, heterojunction, photoelectrochemical properties
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