| The quantum phenomena of the heterostructure for GaAl As/GaAs/GaAlAs are analyzed firstly, and the wave functions and dispersion relation in the heterostructure are derived. It is then from stationary Dirac equation for relativistic dynamics follow that Rashba spin-orbit coupling in2-dimensions electron gas is derived theoretically by it’s non-relativistic limit.Secondly, the spin electron tunneling probability on Fe/GaAs/GaAlAs/GaAs/Fe structure is calculated by using transfer matrix theory and plan wave approximation. Under the directions of magnetization of two ferromagneties are upward, downward parallel and antiparallel, with the spin-coupling intensity increasing, it is found, that the phase varied periodical spin electron tunneling probability with barrier width separate distinctly. And as certain spin intensity, the periodical variation law is also variously different for the three cases.Thirdly, similarly using transfer matrix theory and plan wave approximation, the super lattices with different barrier are calculated for Fe/super lattice/Fe structure. One has found, in only single barrier, the spin-electron coupling probability will be extrema in the quantum transport, due to the spin-electron resonant tunneling. The maximum or minimum is dependent on the relationship between the barrier width and Fermi wavelength of spin-electron. When there are two barriers in the super lattice, the peak value splitting take place in the scheme. This is on account of overlapping of wave functions in neighboring quantum wells, the degeneration of energy levels is eliminated, single resonance energy level splitting, i.e. resonance splitting effect. As the more barriers in the super lattices, the number of peak value increase in the scheme. The principle significance of this work lies in that, remedies a defect of the previous work, the results can provided certain reference for the predetermination of properties and theories for some semiconductor parts. |
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