TiO₂Micro-structures And Photocurrent Characteristics Based On AAO Template

Along with the environmental pollution and energy crisis, the functionalmaterials of high efficiency、low energy consumption of materials and no pollution toenvironment have attracted much attention.TiO2semiconductor materials of somespecial properties, Such as surface effect、volume effect and quantum size effect andso on, have attracted people to research in energy storage and conversion.TiO2withgood chemical stability、high dielectric constant and transmittance of visible light hasmany industrial uses, such as the super capacitor、electrochromic devices、solar celland so on.TiO2thin films can be prepared by a great many of methods such as sol–gelmethod, gas phase deposition method, sputtering method, chemical vapor depositionand so on.TiO2thin films deposited by RF sputtering technique have very betteradhesion, film thickness uniformity and easy control, but have low deposition rate andcomplex of the doping. Sol-gel method has easy control of the reaction conditions,simple equipment and easy to mixed with a certain amount of other elements, butTiO2films of the method have the disadvantages of poor film adhesion and filmthickness not uniform.The goal of the paper was to formTiO2film by RF magnetron sputtering andSol-gel method, mainly introduced the RF magnetron sputtering method to preparethin films. BecauseTiO2films deposited by RF sputtering technique only have afew reports. The effect of the process parameters of sputtering power, Ar pressure andpost annealing treatment on theTiO2structural and functional characteristics were explored. Single-phase anatase was obtained at110w，0.5Pa and annealed temperatureof5500C. By changing the power, pressure and annealing temperature, single-phaseanatase could be converted to mixed phase of different phase ratio. The optimum ratioof the rutile/anatase phase (WR) is approximately0.5for favorable photoelectricproperties result hinted that there is a synergistic effect between rutile and anatasephase.In order to improve the photoelectric properties of theTiO2thin films, weprepared porous alumina.TiO2thin films were prepared by RF sputtering andSol-gel on AAO to increase the specific surface area and improve the photoelectricperformance of thin films. XRD diffraction and Raman scattering spectra illustratethat the crystal structure ofTiO2prepared by RF sputtering and Sol-gel are differentafter being calcinated at5500C. On the conductive glass FTO, theTiO2particlesprepared by RF are distributed evenly and no cluster phenomenon, but the TiO2prepared by Sol-gel consist of small particle. On AAO tem-plet,TiO2sol particles areeasy to flow in the hole due to the liquidity colloidal solution, which is contrary withthe simple prepared by RF. The photocurrent experiment results show that theTiO2prepared by Sol-gel have better photocurrent performance.