Effect Of Annealing Temperature On Raman Property Of IZO Superlattice Nanowires

Transparent semiconductor oxide as an important optoelectronic information materials, it has a wide range of applications in solar cells、light-emitting devices、 electronic components and other fields.Among them, ZnO is a wide-band-gap semiconductor. The research on the synthesis and application of ZnO nanostructures is one of the hot topics in material research.The introduction of group III elements into the structure of ZnO may lead to the changes of microstructure and cause the formation of novel superlattice structure. Therefore, the exploration of InMO3(Zn0)m(IMZO, M=In、Ga、Fe、Al; M is an integer) homologues superlattice nanomaterials on their growth and properties has important significance not only to scientific research but also to practical application.In this thesis, we have synthesized In2O3(ZnO)m superlattice nanowires by a simple chemical vapor deposition method. The scanning electron microscopy and transmission electron microscopy observation indicate that these nanowires consist of an alternative stacking of In-0layer and In/Zn-O layer along the growth direction. Raman spectra of annealed samples at different temperature were studied. AM mode and A1(LO) mode frequency shifted to571cm-1and619cm-1, Raman peak symmetry enhanced, this showed that the sample of Vo and Zni reduced. It means that annealing helps to improve the crystal quality of the In2O3(ZnO)m superlattice nanowires. The optimal annealing temperature is1000℃.