Preparation And Properties Of Iron Oxide Thin Film By Plasma Oxidation

Iron oxide thin films were widely used in the field such as catalysis, sensor, energy storage, solar energy conversion. Tremendous efforts have been put into the preparation of iron oxide thin films. Unfortunately, most of them suffered from the limitation of substrate materials since a high temperature post heat-treatment was needed. In this paper we introduced plasma which can get prepared uniform Fe2O3films with high quality in a relatively low temperature.In this work, we succeeded control the phase constitutions by using the plasma device developed in our laboratory. Different doped transition-metal a-Fe2O3and Fe3O4thin films were prepared using magnetron sputtering and plasma oxidation technique. Through analyzing the sample properties by VSM(Vibrating Sample Magnetometer), XRD (X-ray Diffraction) and SEM (Scanning Electron Microscopy), we investigated the growth process and structure of thin film. The measurement of the photoelectrochemical properties and phase constitution is achieved by the electrochemical workstation, ultraviolet-visible spectrophotometer and XRD. The main conclusions in the thesis are shown as follows:1. Metal oxide films could be prepared in a relatively low temperature by plasma oxidation technique. We successfully controlled the phase constitutions and morphology of the iron oxide thin films by changing oxygen concentration, time and temperature.2. Through micro doping Nickel and Tin, the absorption efficiency of visible light were dramatically improved.3. With the increasing of doping amount of Tin, the photocurrent of a-Fe2O3increase with the Tin concentration up to3.5at.%. With the increasing of doping amount of Nickel, the photocurrent of a-Fe2O3increase with the Nickel concentration up to8at.%.