Space Radiation Effects And Simulation Test Method Research On Typical Sram For Satellites

Assessment of anti-radiation performance for SRAM memory is veryimportant because SRAM is the Core components of satellite electronicsystems. But the method that using now only can make a qualitativejudgment on anti-radiation performance of SRAM. It is difficult to study thespace radiation effects of SRAM separately, and there is some question suchas measuing methods are not uniform, failure judgement is different whenusing.This thesis analyzed the total ionizing dose effects of SRAM memoryby measuing typical DC parameters, AC parameters and functionalparameters in irradiation and accelerated annealing test. The resultsshowed that the data logic state error (WW0), supply current is sensitiveto total ionizing dose effects. The single event upset of bulk silicon andSOI SRAM was measured by heavy ion accelerator, and the1~LET curveof five different SRAM was also gived in this thesis. The SEU rate of SRAM was predicted for two orbits in this thesis. On the above studies, thespace radiation effects simulation test method was established.These results have been applied to the standard document“Q/RJ×××-2012Aerospace in microcomputer memory Single Event EffectsTest Method” of SAST. This standard document defines the conditions andprocedure of single event effects test for SRAM memory. And the draft ofthis standard document has been completed now.