| Indium Oxide(In2O3) is a kind of n-type semiconductor witch shows a wide band-gap,low resistance, and good catalysis. In2O3 nanomaterials has applied in liquid crystal displays, solar cells and gas sensors. So, In2O3 has become a hot topic in research. In2O3 gas sensors can be applied to biological process, agriculture, conduction, and so on.In2O3 was applied in semiconductor gas sensor, because of its good gas-sensing properties to oxidizing reducing gases. Its performance directly relation to its morphology and structure. In this paper, In2O3 nanobelts have been synthesized by thermal evaporation to improve gas sensitive properties of In2O3. At the same time, the morphology, structure and chemical composition are characterized by scanning electron microscope(SEM), X-ray diffraction(XRD) and energy dispersive spectroscope(EDS). The main work is as follows:1. In2O3 nanobelts were synthesized by thermal reduction method using carbon. Purity In2O3 powders and carbon powders was combined and putted in the furnace. In2O3 nanobelts were synthesised. The morphology, structure and composition of the sample was characterized by SEM, XRD, and EDS. Gas sensing properties of single In2O3 nanobelt were researched.2. Er and Eu doped In2O3 nanobelts were synthesized by carbon thermal reduction method, respectively. The mixtures of In2O3 powders, carbon powder, and(Erbium(III) acetate or Europium(III) acetate) were put in the furnace. The Er and Eu doped In2O3 nanobelts were synthesised via carbon thermal reduction, respectively. The morphology, structure and composition of the Er and Eu doped In2O3 samples were characterized by SEM, XRD, and EDS. Gas sensitive properties of single Er(or Eu) doped In2O3 nanobelt were studied.3. The growth and gas sensitive mechanism of In2O3 were discussed. |