Preparation And Properties Of Semiconductor Nanomaterials

One-dimensional nanostructures such as nanopillars and nanobelts are the focus of intensive research owing to their unique physical characteristics. Nano-structure can be used as the material of nano-size devices, and can also be the ideal system of physical properties such as optical, electrical, thermal and magnetic properties of the material at the nano-scale. It is of great significance to study the controllable preparation of nano-materials and study its unique physical properties. In recent years, as the wide band gap semiconductor nano-materials, ZnS and CdS semiconductor materials with excellent properties such as light, electricity and magnetism have been studied by the researchers.In this paper, CdS nano-materials with different morphologies were synthesized by physical vapor deposition. We also studied the effect of gold film thickness, deposition temperature and gas flow velocity on the growth of CdS nanostructures. The controllable growth of CdS nano-materials is realized in a certain extent. The optical properties of the products were studied by means of photoluminescence(PL) spectroscopy. The products were also characterized by X-ray diffraction(XRD) and scanning electron microscopy(SEM). Based on ZnS nano-bands synthesized beforehand, the heterojunction of ZnS nanobands/CdS nanorods were successfully synthesized by means of physical vapor deposition. In this paper, the syntheses of silicon micro-nano seed array were also explored. The ultra thin crystalline silicon films were prepared by direct gas phase preparation, which laid a certain foundation for the transfer of crystalline silicon film.