The Preparation And Optoelectronic Properties Of Molybdenum Disulfide 2D Nanocomposites

In recent years, the two-dimensional layered nano materials because of its unique optoelectronic properties not only has caused widely attention but also has a good application in the filed of optoelectronic. Molybdenum disulfide(MoS2) is one of the transition metal dichalcogenides(TMDs), and it is the typical two-dimensional layered nano materials,due to its unique physical and chemical properties, high mobility, and the adjustable bandgap, it has potential application in optoelectronic devices, such as transistors, sensors, electric memory. With the combination of MoS2 nanoparticles with organic materials exhibiting new properties and applications, more and more people begin to study the feasibility of MoS2 in combination with other materials. Therefore the preparation of nanocomposite of MoS2 and its application in the field of optoelectronics gradually set off a new upsurge of research.To sum up, this paper use single-layer MoS2 as the main research object, first use the lithium ion intercalation method to made single-layer MoS2, then transfer the MoS2 to the solvent we want. Under such conditions, focusing on the MoS2-PC61 BM nanocomposites, MoS2-Au NPS nanocomposites in the applications of electronic memory device, and improve the characteristic of the device through improving the relevant conditions. This paper mainly covers the following three aspects:First, this thesis mainly strip single-layer MoS2 by lithium ion intercalation method, then using the solvent transfer(ST) method to transfer the MoS2 to the other solvents after purifying, then measuremented by AFM, TEM etc. On the basis of this, we using surface deposition(SD) method to construct nanocomposites of MoS2-PC61 BM.Second, this thesis mainly selects the composite of MoS2-PC61 BM as the active layer of the Flash memory device, in order to improve the performance of the device, we make a series of comparative experiments. The device type has changed by adjusting the doping ratio, and we also reserch the effect of the thickness of the active layer on the device. Finally, a feasible storage mechanism is proposed based on the characterization of the composite materials and the analysis of the experimental data.Third, this thesis directly uses the MoS2-Au NPS nanocomposites as the active layer of memory device, which avoids the prior dispersion problem and the problem of solvent effect, at the same time the adjust of the concentration is more convenient. The memory devices based on MoS2-Au NPS was found the Worm characteristics. In order to further study, the comparison of the two conditions is done and obtain some regulations, finally based on these regulations we put forward a possible storage mechanism.