Preparation Of The Ti（In,Nb）O₂ Film And The Research For Its Resistive Switching Characteristics

TiO₂ is a extremely promising resistive material. The resistive switching mechanism of TiO₂ is dominated by the oxygen vacancies conductive filament conduction. However, the formation of conductive filament needs a high activation voltage which could cause physical damage to the device, reduce device yield, increase stability and make the process more difficult. Therefore, it is necessary to study how to reduce the activation voltage and improve the performance of TiO₂ resistive memory.In this work, after In doping, Nb doping, as well as（Nb+In） codoping TiO₂, the Pt-TiO₂-Pt, Pt-TIO-Pt, Pt-TNO-Pt and Pt-TINO-Pt structure devices were constructed with films prepared by spin-coating method. Moreover, the electrical characteristics and electronic transport transmission mechanism of each device were researched. The study focuses on how to improve the resistive switching performance by In doping, Nb doping, as well as（Nb+In）-codoping. The resistive switching characteristics of each device were investigated and conclusion as below:1. The Pt-TIO-Pt film device with a plurality of electron traps shows great potential on TiO₂ RRAM. However, an excess of electron traps cause a large resistance which makes the device show no resistive switching.2. The electronic transmission mode of Pt-TNO-Pt film device exhibit Ohmic conduction and other complex conduction in the initial state. The instability resistive switching phenomenon obtained after high activation voltage disappears quickly. It may be owing to the oxygen vacancies reducement which caused by oxygen vacancies and free electrons forming the "electronic-vacancy pairs". Finally, the electronic transmission mode of the device trends to SCLC.3. The Pt-TINO-Pt resistive system exhibits stable bipolar resistive switching without high activation voltage. The high RHRS/RLRS ratio of 103 is obtained（an order of magnitude higher than TiO₂）. The device can run more than 100 cycles and still keep good resistive switching after 1000 s retention time. The resistive switching mechanism is based on the SCLC dominated by the electron trap. The change of resistance can be realized through the trap of electron capturing and releasing. By（Nb+In） doping TiO₂, it can be adjusted the number of electron trap which should better regulate the resistive switching parameters of the TINO function layer and reduce the craft difficulty.