Design And Implement Of A 0.18μm Radiation-Hardened Standard Cell Library

With steady decrease in the feature size of Integrated Circuits (IC) and increasingly pursue for chip performance, the scale and complexity of chips are increasing gradually. Generally, getting to market faster brings chip enterprises more economic benefits. Predesigned standard cell library can be combined with EDA (Electronic Design Automation) tools to shorten chip design cycle. Besides the design cycle and functional characteristics, robustness of chips should also be emphasized. In fields like precision medical equipment, military industry and aerospace, anti-radiation resistance of chips is of vital importance.This thesis firstly studied the functional characteristics, design method and fabrication procedure of traditional standard cell library. And the limitation of conventional cell library in special fields is recognized. Then, optimization of conventional sequential elements is done. Triple interlocked storage cell DFF (D Flip Flop) with set function is added, and 0.18μm manufacturing process is used to design schematics and layouts of all independent units in the library, thus formed a standard cell library with the capability to resist single event effect. Finally, to ensure that the designed library could be recognized and applied by other EDA tools, characterization and extraction are done to the above library, and timing and physical library are derived.To verify the library’s functional characteristics and compatibility of derived data, Encounter and ICC (IC Compiler) are used to do the placement and routing. Based on the conventional standard cell library and radiation hardened standard cell library, two AGC (Auto-Gain Control) chip layouts are designed. Then, performance and area are analyzed and compared between the two layouts, which demonstrate the standard cell library can be correctly applied to the chip design.