The Effect Of Line Defects On Transport Properties Of Silicene

In recent years,because of many special transport properties,the research in silicene has been an active field in 2D semiconductor materials.In this paper,by using tight-binding approximation theory and non-equilibrium Green's function method,the monolayer silicene nanoribbon with line defects is calculated and analyzed theoretically.We move away a silicon atom from silicene nanoribbon,which forms vacancy defect.Applied a vertical electric field in silicene nanoribbon and considering the influence of the Rashba spin-orbit coupling and intrinsic spin-orbit coupling on silicene,by using non-equilibrium Green's function method and muti-channel transmission theory,we studied the effect of line defects on transport properties of silicene.The results show that: due to line defects,the localization of the charge enhances,the total transport conductance decreases;With the width of center region increasing,the total conductance increases.Line defects in the middle of center region of silicene nanoribbon effect more than in the region of the edge.With the increasing of Rashba spin-orbit coupling and the Electric field intensity strengthen,the total conductance decreases.Due to line defect,K valley and K? valley also have effect on the conductance.But it has little influence on perfect valley polarized region,Which can be used to make valley valve.When the Fermi level in the band gap of bulk,line defects have little effect on transport of the inter-and intra-valleys,which can be completely polarized.But with increasing of the Fermi energy,line defects have great effect on the transmission of inter valleys,the polarization of the inter-and intra-valleys exhibits oscillations obviously.We hope to found more novel features about silicene.It not only provides theoretical tools for the development and application of actual valley electronics and spintronics nanoscale devices,but also promotes the combination of silicene and modern electronic industry.Expect it to become the most potential materials in nanotechnology applications!...