Effects Of Position-dependent Electronic Effective Mass On Binding Energy Of Impurity State In Semiconductor Quantum Dots Under Pressure And Temperature

Under the continuous dielectric model and the effective mass approximation,the ground state binding energy of the impurity state in a finite-potential spherical quantum dot is studied theoretically by using the variational procedure.Considering the effect of position-dependent electronic effective mass on the ground state binding energy of the impurity state,and on this basis,the impurity state binding energy in spherical quantum dot under the hydrostatic pressure and temperature is calculated.The numerical calculations are used to performance the ground states binding energies of the impurity states in both AlxGa1-xAs/GaAs and AlxGa1-xN/GaN spherical quantum dots as a function of dot size and Al composition of ternary mixed crystal barrier material.The influence of position-dependent electronic effective mass on the binding energy is studied and compared with the case that the electronic effective mass as a constant.The temperature and pressure effects of spherical quantum dots are discussed.The calculation results of two materials show the following common characteristics that when the quantum dot radius is small,the position-dependent electronic effective mass increases the ground state binding energy of impurity state,with the dot radius increasing,the increased amplitude of ground state binding energy of impurity state becomes small;When the dot radius is large,the position-dependent electronic effective mass reduces the ground state binding energy of the impurity state.With the increase of the ternary mixed crystal Al component,the ground state binding energy of the impurity state increases monotonically;In addition,the binding energy of the impurity state increases linearly with the increasing applied pressure,however,it decreases with the increasing temperature.