Preparation, Characterization And Properties Research Of Bi₂S₃ Nanorods And Thin Film Materials

In recent years, the semiconductor nano materials has been widely used in photocatalysis because that its unique physical properties.Bismuth sulfide is a kind of layered structure of the semiconductor material, its gap band is about 1.7 e V. vulcanization bismuth nanomaterials can well restrain light pair of compound, which enhance the capacity of nanoparticles oxidation. As an electrochemical and catalytic material has a broad application prospect because its excellent optical and catalytic properties.The Characteristics of the nano semiconductor material due to its particle size and morphology. In this paper, we will use three methods to synthesis different morphology of sulfide bismuth nanomaterials and nano composite materials,and try to controll the synthesis process of bismuth sulfide morphology, and through compound modification to decorate and improve the photocatalytic performance significantly.Based on the five hydration bismuth nitrate as the source of bismuth, sodium sulfide as the source of sulfur, urea as mineralizer, we use a simple hydrothermal method to synthesis the single bismuth sulfide nanorods. Using pyrolytic deposition reaction and successive ionic adsorption and reaction to synthesis two different types of compound bismuth sulfide nano film, and studies the various reaction conditions on the bismuth sulfide nanorods and nanometer film formation and the influence of the photocatalytic mechanism and performance systematically. The experiment of the preparation for a single,and pure phase of Bi₂S₃ nanorods morphology, the gap band is 1.7 e V. With 12 h reaction time, 120°C reaction temperature, ph10 to 11, the hydrogen peroxide as electron capture agent, it has highest photocatalytic degradation rate of the degradation of rhodamine B;Bi2O3/Bi₂S₃ thin film preparation by present porous structure reaction. When the pyrolysis temperature is 550°C,and post-processing temperature is 200°C, and the solvent is methanol, the degradation of catalyst in 140 min rate is higher than others, can reach above 85%. We use a simple temperature SILAR method to synthesis the Bi₂S₃/Zn O thin films. when the operation cycle is 20 cycles, ionic liquid precursor immersion time were 60 s and 30 s, respectively. The degradation of catalyst in 140 min rate can reach 95%, and it has a good chemical stability.