Thermoelectric Device Based On Nano Carbon Materials/Polyaniline And Its Thermoelectric Properties

Small,wearable electronic devices play an increasingly important role in daily life.However,current power generators such as batteries are heavy and need to be replaced frequently.Thermoelectric devices can transform the thermal power into electricity power by the Seebeck effect,and they do not need to be replaced frequently.Besides,they are not influenced by light,wind or other natural conditions.Thermoelectric materials are generally divided into semiconductor thermoelectric materials and conductive polymer thermoelectric materials.Semiconductor thermoelectric materials have excellent thermoelectric properties,but they are expensive,heavy and rigid.The conductive polymer material are flexible,but they have low conductivity and the power output.In order to resolve the above problems,the low-cost carbon nano materials and polyaniline were selected as raw material,and the flexible,light quality thermoelectric devices were prepared on the flexible substrate(polyimide or polyester).Then,the thermoelectric properties of the materials and the output properties of the devices were studied.The work of the paper are as follow:(1)Flexible p-type RGO/PANI thermoelectric films were prepared by in situ polymeriz ation,and the maximum conductivity of the films was 125 S/cm,the maximum Seebeck coefficient of the films was 13.2 V/K,the maximum power factor of the films was 2.0 ?W/(m K2),the minimum thermal conductivity of the films was 42 W/(m K).N-type thermoelectric film was prepared by azotizing the RGO film,and then thermoelectric device was prepared by connecting p-type films and n-type films in series.At the temperature difference of 100 K,the device could generate a voltage of 2.73 m V and a power output of 69.5 n W.(2)In order to further improve the conductivity of the composite films,O-SWNT was added in the process of preparing the RGO/PANI f ilms.The power factor of RGO/PANI/O-SWNT films could reach 50 ?W/(m K2),which was 25 times more than that of RGO/PANI films.In order to solve the problem that n-RGO film could not bend at large angle,PEI and DETA were used to prepare n-type SWNT film.At the temperature difference of 100 K,the device can generate a voltage of 4.73 m V voltage and an output power of 282 n W.Compared to the RGO/PANI thermoelectric device,the output performance of RGO/PANI/O-SWNT thermoelectric device has been improved obviously.(3)SWNT/PANI solution was prepared by in situ polymerization,and then the polyesters treated by Na OH were immersed into SWNT/PANI solution and then sonicated.Under the room temperature,the electrical conductivity of thermoelectric textile could reach 2250 S/m,the coefficient of thermoelectric textile could 12 ?V/K,the maximum power factor of thermoelectric textile could 0.3 W/(m K2),the lowest thermal conductivity of thermoelectric textile was 5.47 W/(m K).At the temperature difference of 115 K,the device could generate a voltage of 3.82 m V.At a temperature difference of 75 K,the device could generate power output of 47 n W.The SWNT/PANI textile device w as light weight and good f lexibility.Bes ides,the SWNT/PANI textile TE generator displays no change in performance on repeated bending for 150 cycles with a radius of 5 mm,which was important for w earable electronic devices.