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Synthesis And Physical Properties Of IZO/IGZO Nanostructure

Posted on:2016-08-23Degree:MasterType:Thesis
Country:ChinaCandidate:Y JiFull Text:PDF
GTID:2321330464957603Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
InMO3(ZnO)m(M=In,Ga)homologous compound is not only a good transparent oxide semiconductors,but also exhibits exceptional electron transport properties,which have attracted much attention recently.InMO3(ZnO)m(M=In,Ga)homologous compound has a novel structure-“Superlattice Structure”,which gives the ZnO nanomaterials many fascinating optical and electronic properties.Over the last decade,due to some difficulties of the multi-doped ZnO in the preparation process,so there are few reports about IZO/IGZO superlattice nanostructures,and studying on their physical properties is rare.It is the key to achieve the controllable preparation of IZO/IGZO nanowires and nanobelts and study their further physical properties.This paper introduces that the IZO/IGZO nanostructures have been synthesized successfully and their further physical properties have been studied.We fabricate IZO nanobelt via a simple chemical vapor deposition process.The synthesis of In2O3(ZnO)3nanobelts is carried out in the horizontal tube furnance with double temperature zones,via thermal evaporation at 1400 ℃,with Zn(NO32 and In(NO33 powder as the source material.Due to the heavy doping of In,the band gap of In2O3(ZnO)3 is reduced sharply to2.97 eVThe.emission peak in photoluminescence spectra has red-shifted.We also test the electrical properties of samples.Compared to ZnO,In2O3(ZnO)3 nanobelts have better electrical conductivity and the conductivity of In2O3(ZnO)3 nanobelts increases two orders of magnitude.The key to the synthesis of IGZO superlattice nanostructure is to achieve co-doped In and Ga,which are close to the atomic ratio.We have also successfully synthesized IGZO superlattice nanostructure and ensured its repeatable preparation by metal thermal diffusion method.From the HRTEM images,we can see clearly the “Zigzag” modulated structure which is more conducive to the release of stress.In these IGZO nanobelts,In-O and Ga/Zn-O layers stack alternately along the growth direction of nanobelts,which is of great significance to enhance the mobility of devices.
Keywords/Search Tags:ZnO, doping, supperlattice, Nanowire/nanobelt
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