Preparation And Stduy Of Superior Thermal Stable Poly (Arylene Ether Nitrile) Dielectric Film

With rapaid development of imformation technology,the demand for integrated and portable devices is ever increasing,which provide a new task of fabricate advanced materials to feed the demand.As for electronic products,the dielectrics is an one of most important component to the productes’ property,as a result,the fabrication of dielectrics is crucial to manufacturation of advanced electronic products.Poly(arylene ether nitrile)(PEN)is a typical example of engereering plastic,which can applied in many aspects in our daily life and social production.Recently,PEN was supposed to have a great potential in production of film capacitor and energy storage capacitor for its’ outstanding properties such as,high insulation,excellent thermal stability and excellent dielectric property.In this paper,for the purpose of widen the application of PEN and PEN based materials,the chemical and physical processing methods have been taken to optimaize the properties of PEN,by which it can be applied in the aspects mentioned above.A new type of PEN termianated by phthalonitrile(PEN-Ph)is synthized by anionic polycondensation.For the existence of phthalonitrile,phthalocyanine rings will generated during thermal processing or catalysis,by which the polymer chain can be crosslinked together.Therefore,we take a triphthalonitrile(TPh)as assist crosslinker and PEN-Ph as matrix resin to fabricate a kind of crosslinked PEN(C-PEN)film through thermal processing.The DSC,TGA,DMA and TMA test results revealed that the C-PEN was given excellent thermal stability and upsoar dimesion stability.In order to comfirm the dielectric property,the dielectric test is carried out to determine the frequency,temperature and time dependence of dielectric property.According to the results of it,the film can served at broad frequency range(100 Hz-200 kHz),broad temperature range(20-350 oC)and the film also shows excellent reliability.Ferroelectric tests demonstrate the C-PEN is a typical linear dielectrics and possessing highly stability of energy storage property at extremely high temperature.The crosslink reaction of PEN-Ph can only occur at relative high temperature,which restricts the fabrication of the C-PEN.In order to aviod the drawback,the znic oxide nano whisker(ZnO-nws)is prepared via hydrothermal method and taken as catalyst for the crosslink reaction of PEN-Ph.Then,we investigate the catalysis effect on the crosslink reaction of PEN-Ph and also study the results of crosslink density,thermal stability,mechanical property,dielectric property and energy storage property with presence of ZnO-nws.Through the research,the ZnO-nws has prominent catalysis to the crosslink reaction and it also can promote the dielectric cosnant of the film leading to higher energy density,under premise that keeps the temperature stability of dielectric property.Because of the special network,the dielectric constant of the C-PEN is relative low,which hamper the application in energy storage capacitor.BaTiO3(BTO)is recognized as a general used high dielectric constant filler,therefore,we take BTO as core prepare a core-shell structured BaTiO3@PbZrO3 nanoparticles(BTO@PZ-NPs)and blend it with PEN-Ph and ZnO-nws to prepare a kind of BTO@PZ-NPs/ZnO-nws/C-PEN composite film with high thermal stability and dielectric constant.According to test results,the presence of BTO@PZ-NPs has not deteriorated the thermal stability and the dielectric-temperature dependence of the composite film.The presence of BTO@PZ-NPs has a positive effect on dielectric constant of the composite film,when the content of filler is 50 wt%,the dielectric constant shows a 4 times promotion.More interestingly,moderate BTO@PZ-NPs content in the system brings about considerable enhancement of breakdown strength.Therefore,with the presence of BTO@PZ-NPs,the energy density of the composite film shows a moderate promotion in this work.In this paper,the C-PEN is demonstrated has weak temperature and frequency dependence of dielectric property within wide range and have huge potential to applied in film capacitor and energy storage capacitor.Besides,the ZnO-nws and BTO@PZ-NPs also confirm as effective ways to optimaize the processing property and dielectric property and energy storage property.