Deposition Of Infrared Antireflection Hard Film On Chalcogenide Glass

Chalcogenide glass,as a new new type of infrared optical material,has the advantages of wide infrared transmission band,low refractive index temperature coefficient and precise mold pressing.So the study on the coating properties of chalcogenide glass and the preparation technology of high strength and anti reflective film will be beneficial to the further promotion and application of chalcogenide glass.In this paper,the material properties of chalcogenide glass substrate(IRG205,IRG206)were studied by experiments,and the appropriate ion assisted bombardment strength and time were determined.On the basis of this,the preparation technology of 8-12 μm antireflection hard film on chalcogenide glass substrate(IRG205,IRG206)was explored.As chalcogenide glass substrate(IRG205,IRG206)has low softening point characteristics,the deposition technology of DLC film by PECVD at low temperature was studied,and the feasibility of the preparation of antireflection hard film on chalcogenide glass substrate(IRG205,IRG206)was discussed.Then the antireflection hard film on chalcogenide glass substrate(IRG205,IRG206)by combination technology was deposited successfully.The main conclusions are as follows:(1)The resistance of chalcogenide glass substrate to assistant ion bombardment is weak,and the intensity and time of bombardment should be strictly controlled.(2)It is feasible to deposit DLC on the chalcogenide glass substrate(IRG205,IRG206)at room temperature by PECVD technology.When the film thickness is less than 200nm,the hardness of the film conforms to the JB/T8226.1-1999 standard.(3)PECVD technology should not be used to deposit the 8～12 μm band optical films,the thin films prepared by which,have a strong absorption peak in this band.(4)The deposition of 8-12μm antireflection hard film on chalcogenide glass substrate(IRG205,IRG206)by combination technology is feasible,the average transmittance of the film is more than 90%,abrasion resistance and environmental test reached JB/T8226.1-1999 standard requirements.