Study On The Properties Of Nonvolatile Memory Of Ti-doped Carbon Nanotube And CdS@C Micro-/nano-structure

Resistance random access memory(RRAM)based on resistance change to record data has become the most promising next-generation non-volatile memory because of its simple equipment,considerable micro-prospects,international research in this area is also carried out in full swing.However,the practical application of RRAM have reached the bottleneck because of the resistance change mechanism is not clear and don’t know how to modulate the resistance change performance of substrate materials.In this paper,the reversible change of micro-/nano-structured materials resistance were studied when the external environment changes,further explore its application as a new generation of non-volatile resistance random access memory(NV-RRAM)and obtain the following results:(1)The titanium-doped carbon nanotube(CNT:Ti)and cadmium sulfide@ carbon(CdS@C)hybrid micro-/nano-belt were prepared by modified chemical vapor deposition(CVD)and the low temperature combustion synthesis(LCS),respectively.Modulate the low-dimensional semiconductor micro-nanostructures controllably through doping,hybrid technical means,to achieve a regular resistance change behavior of the material in the external light,electricity,and heat signal.(2)In the study of piezoresistive effect,we found that there is regular change of the two micro-/nano-structured materials between the resistance and strain.The resistance decreased under compressive strain and increased under tensile strain,the greater the strain,the greater the change in resistance.(3)In the study of resistance switch effect,we found in a certain temperature range,the higher the temperature,the resistance change of the CNT:Ti more obvious.(4)In the study of resistance switch effect photoelectric effect,we found that CdS@C hybrid micro-/nano-belt would be negative photoconductive effect under subbandgap light,and had a good persistent negative conductance in the low bias voltage.(5)Using the synergistic effect of the strain,temperature and infrared light to explore the performance of the resistance memory effect.Found that after the cancellation of the external signal,the resistance of the device will not return to the initial state,means the signal can be saved,and the written electrical signal can be erased at a relatively high voltage.On this basis,we developed the strain writing,electrical writing and infrared light writing three different ways to write RRAM.Besides,comparing the storage performance of each write signal,we find out that the write signal of tensile and temperature for Titanium-doped carbon nanotubes show more significant,and tensile strain and infrared light for CdS@C micro/nano belt show more significant.