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Structures And Thermoelectric Properties Of Cu4Sn7S16-based Semiconductors

Posted on:2018-05-16Degree:MasterType:Thesis
Country:ChinaCandidate:T T HeFull Text:PDF
GTID:2321330536966272Subject:Materials engineering
Abstract/Summary:PDF Full Text Request
Cu4Sn7S16 is one of the typical Cu-Sn-S ternary compounds with complex rhombohedral structure and space group R-3m.In the unit cell of Cu4Sn7S16,it has been reported that 3/4 of the tetrahedral sites and 1/8 of the octahedral sites are occupied by Cu+ ions,and 7/8 of the octahedral sites are occupied by Sn4+ions.This indicates that there are 1/4 of tetrahedral Cu vacancies unoccupied.In this work we have synthesized ternary Cu4Sn7S16 compounds with different Sn and Cu in excess,which allows extra Sn or Cu to occupy the intrinsic Cu vacancies.We have therefore investigated the structures and thermoelectric?TE?properties of ternary Cu4Sn7S16 compounds with an excess of Sn and Cu,achieving the following results which are summarized blow:For the ternary Cu4Sn7+xS16 compounds with Sn in excess,the excess Sn has a site preference in the Cu vacancies with the oxidation state Sn2+ acting as donors.The occupation of Sn2+ unpins the Fermi level?Fr?,and allows the Frentering into the conduction band.Therefore,the carrier concentration has been enhanced by about two orders of magnitude with Sn content increasing from x=0to x=0.5.The lattice contribution ?L has been reduced with Sn content increasing.As a consequence,the thermoelectric figure of merit?ZT?of the compound Cu4Sn7+xS16?x=0.5??ZT=0.41 at 863 K?has a doubled value of stoichiometric Cu4Sn7S16?ZT=0.20 at 853 K?.In the ternary Cu4Sn7S16 compounds with Cu in excess,the bandgap has reduces from 0.94 eV to 0.85 eV,and the carrier concentration enhances by about two orders of magnitude with Cu content increasing from x=0 to x=0.2 for Cu4+xSn7S16.The lattice contribution ?L reduces with Cu content increasing.As a consequence,the maximum thermoelectric figure of merit?ZT?of the compound Cu4+xSn7S16?x=0.2?is 0.3 at 893 K,about 1.5 times that of stoichiometric Cu4Sn7S16?ZT=0.20 at 853 K?.Upon Se substitution for S in Cu4Sn7.5S16,we have prepared the compounds Cu4Sn7.5S16-xSex,and observed that the highest ZT value is 0.45?x=1.0?,which is about 10% higher than that of Cu4Sn7.5S16.
Keywords/Search Tags:band structure, thermoelectric performance, lattice thermal conductivity, Cu4Sn7S16, Hall carrier concentration
PDF Full Text Request
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