Ti-doped Nanostructured Tungsten Oxide Thin Films Deposited By Magnetron Sputtering

The WO₃ thin films were partially crystalline amorphous structure deposited by magnetron sputtering at room temperature.The bias voltage on the substrate doesn't significantly increase the crystallinity of the WO₃ thin films.However,the bias affected the size of nanocrystalline grains.Relative higher bias led to the distortion of the tungsten oxide octahedral lattice,and the annealed films showed different phase structures.WO₃ thin films were deposited by glancing angle magnetron sputtering.When the glancing angle is more than 80°,WO₃ thin films with nano-columnar were obtained.As the Glancing angle increases,the nano-columnar become more and more obvious,and the specific surface area increase.When annealing temperature is lower than 300^o C,the WO₃ thin films show amorphous structure.The WO₃ thin films transferred from amorphous to polycrystalline in the temperature range of300^oC-400^oC.The nano-structured WO₃ electrochromic thin films doped with Ti were prepared by combination targets of pure tungsten and pure titanium.The surface morphology,microstructure and electrochromic properties of the films were characterized by XRD,SEM and electochemistry test system.The experimental results show that the ion transport capacity of the films is increased and the colorization is well proportioned by Ti doped.When the doping amount of Ti is 2%,the UV absorption rate of the films was increased more than 10%,which means the films have good UV absorption.When the doping amount of Ti is 4.5%,the colorization rate of the films was significantly improved.