Preparation And Properties Of Benzocyclobutene Resin/POSS Low-k Composites

The silicon-containing benzocyclobutene resin is widely used in aviation,military,microelectronics,and other fields,as their excellent film-forming properties,dielectric properties,heat-resisting properties and moisture absorption resistance.With the development of science and technology,people began to put forward anincreasingly demanding request for various aspects of material properties,especially dielectric properties.The incorporation of another structure in the matrix resin,can effectively improve the performance of all aspects of the prepared composite/blend material.As one organic-inorganic hybridcage-like structure with low density and high symmetry,Polyhedral oligomeric silsesquioxane（POSS）can effectively reduce the dielectric constant and improve the thermal stability of the composite/blend material when introduced into the matrix resin.Inthisdissertation,akindofsilicon-containing benzocyclobutene-4-（1,1-dimethyl-1-vinyl）-silylbenzocyclobutene（4-DMVSBCB）monomer was prepared.Utilizing homopolymer（P（4-DMVSBCB））and copolymer between 4-DMVSBCB and styrene（St）as matrix resin,three different kinds of composite/blend materials,P（4-DMVSBCB）/OVPOSS,P（4-DMVSBCB）/BCB-POSS and P（4-DMVSBCB）/D4viBCB were prepared by introducing octavinyl POSS（OVPOSS）,benzocyclobutenegraftingPOSS（BCB-POSS）and benzocyclobutene-grafted cyclotetrasiloxane(D4^viBCB),respectively.In addition,the properties of these materials were investigated.The results show that the dielectric constant of the material decreased to 2.43 and T₅ thermal decomposition temperature improved from 405 ^oC to 445 ^oC when introduced OVPOSS into P（4-DMVSBCB）.In addition,the hardness of composite/blendmaterialalsoimproved.Thedielectricconstantof P（4-DMVSBCB）/BCB-POSS decreased to 2.43 with the induction of BCB-POSS,meanwhile,there’s been a significant increase in thermal stability and hardness of composite/blend material.The dielectric constant of the material slightly increased to2.69 when introduced D4^viBCB into P（4-DMVSBCB）.But the remarkable advantage is that D4^viBCB can improved thermal stability and material toughness of P（4-DMVSBCB）/D4^viBCB.In addition,the effect of 4-DMVSBCB content on the material properties of P（4-DMVSBCB-co-St）/BCB-POSS was also studied.The result show that the composites presented little difference in performance with homopolymer when the content of 4-DMVSBCB in the copolymer improved to 40%,and can reduce the cost.The research results are hoped to providea kind of low k resin material with excellent properties for microelectronic industry.