Study On The Application Performance Of Ion Doped SnO₂ Semiconductor Materials

SnO₂ based semiconductor materials were widely used in the fields of photocatalysis,lithium ion battery,infrared barrier coating and other functional materials,which is a hotspot in the field of material science.Heterogeneous ion doping has important influence on the crystal structure,electron band structure and electron transport performance of SnO₂,which in turn affects the material properties.This paper focuses on the ion doeped SnO₂-based semiconductor materials,mainly studies the effect of ion doping on the application properties of SnO₂ in photocatalytic,lithium-ion battery and infrared barrier coating,the related mechanism of ion doping on the performance was discussed.The main results are as follows:1.Study of Sb ion doping on the photocatalytic activity of SnO₂/g-C₃N₄ composites.SnO₂:Sb/g-C₃N₄ and SnO₂/g-C₃N₄ composites were prepared by hydrothermal method and their photocatalytic properties were compared,it was found that the photocatalytic performance of SnO₂:Sb/g-C₃N₄ is superior to the undoped,and the sample of SnO₂:Sb/g-C₃N₄ with SnO₂:Sb content of 25 wt%exhibited the best photocatalytic activity.The results show that the photocatalytic performance improvement of composite samples is due to the increases of the visible light absorption range as well as the separation efficiency and migration rate of photo-generated carriers by SnO₂:Sb/g-C₃N₄ composite samples induced by the doped Sb.2.Study of Sb ion doping on electrochemical properties of nano-SnO₂ cathode materials for lithium ion batteries.The SnO₂:Sb and SnO₂ materials were prepared by hydrothermal method,their electrochemical properties were investigated using the two materials as anode materials for lithium-ion batteries.The results revealed that under the same conditions,the doped SnO₂:Sb anode materials show higher initial discharge capacity and better cycle stability.Research showed that Sb doping could reduce the particle size of SnO₂ and increase the specific surface area for electrochemical reaction.The proper doping of Sb can also reduce the charge transfer resistance of SnO₂,increase the amount of free carriers increase the conductivity of SnO₂ and promote improvement of electrochemical performance.3.Study of F and Sb co-doping on the properties of SnO₂ infrared barrier coatings.The SnO₂:Sb and F,Sb co-doped SnO₂ materials were prepared by hydrothermal method,the infrared barrier coatings containing these two materials were also prepared,their related properties were compared.It is found that the coating containing 25 wt%FATO composite sample with F and Sb doping concentration of 10 at%show the best infrared barrier performance,which could block 60%of infrared light and ensure 85%visible light transmission.The results show appropriate doping of F can further reduce the particle size of SnO₂:Sb,increase the transmission of visible light,and also generate more free carriers to absorb infrared light.