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The Research On High Voltage Solid-State Electronic Swtich

Posted on:2018-07-01Degree:MasterType:Thesis
Country:ChinaCandidate:R ZhangFull Text:PDF
GTID:2322330536481632Subject:Electrical engineering
Abstract/Summary:PDF Full Text Request
In industrial sectors,high-voltage pulse power sources have gained momentum as an innovative device that cannot be replicated.In areas such as food sterilization,surface treatment,metal forming and assembly,health care and energy delivery system,high-voltage pulse power supply is rapidly becoming an irreplaceably important technology.The application of high-power converters has been developing rapidly in recent years.As a result,the tension between the voltage of the system and the rated voltage of the electric semiconductor device becomes more pronounced.Although the maximum voltage stress of bipolar transistor IGBT(HV)pressure value ups to 6500 V,it still can not meet some high voltage power supply converter's demands,series of power switching device method can be used at this time.The key problem of Using connected MOSFETS in series is voltage's imbalance.The process consists of static pressure and dynamic pressure whiches also a focus in the study of this thesis.This thesis analyzes several kinds of pressure technology and designs a high voltage electronic switching system.According to the existing problem,this thesis summarizes the advantages and disadvantages of all kinds of pulse power supply topology,puts forward the design of high voltage solid state electronic switch system through the analysis of the research status at home and abroad for high voltage pulse power supply.Dynamic switch of MOSFET is the basic study of voltage imbalance mechanism foundation of connected-MOSFETs and uneven series pressure mainly concentrated in the turn-off process.Shut off process and the opening process is the opposite.This thesis introduces the working process of MOSFET and analyzes the influence of parameters on the characteristics of switch.And through the simulation verify the causes of uneven pressure of connected MOSFETs from two aspects.One is dynamic voltage imbalance mechanism.The other is static voltage imbalance mechanism.It provides the theoretical basis for the design of high voltage electronic switch and equalizing circuit.In view of the existing pulse transformer is difficult to pass low frequency signals,this thesis proposes a high frequency carrier technology and then design the pulse control circuit.The circuit can realize to s provides a controlled drive signal to connected MOSFETs.In this thesis,the driving ability of MOSFET should be increased.So the power amplification is designed.The thesis will achieve high voltage electronic switch system design,from the pulse control circuit,the drive circuit,the power amplifier circuit,series MOSFETS group to a detailed analysis of equalizing circuit and selection of parameters.Equalizing circuit design is one of the important links in high voltage solid-state electronic switching systems,this thesis will analyze the two kinds of equalizing circuit,parameter design and simulation.Comparing the advantages and disadvantages of the two kinds of equalizer circuit,and select a voltage circuit as the mean of this thesis.In the end,this thesis will achieve a high voltage electronic switch prototype,through the analysis of experimental results and experiment waveforms,in order to verify the rationality of the design and feasibility.
Keywords/Search Tags:High-voltage pulse, Voltage balancing, Drive control, MOSFETs in series, The high frequency carrier
PDF Full Text Request
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