InGaAs/AlGaAs/GaAs Quantum Dot Growth Studies

The insertion of AlGaAs spacers between In GaAs / GaAs quantum dots has certain effect on the distribution of quantum dots,which improves the performance of the device.In GaAs / AlGaAs / GaAs quantum dots were grown by molecular beam epitaxy.The growth of InGaAs / AlGaAs / GaAs quantum dots was studied from substrate temperature,Arsenic pressure,annealing time and cladding.Experimental results show:(1)The InGaAs / AlGaAs / GaAs quantum dots of single-cycle growth increases with the annealing time,and the uniformity of the distribution of InGaAs / AlGaAs / GaAs quantum dots is not improved obviously,and the density decreases at 120 s.(2)InGaAs / AlGaAs / GaAs quantum dots with single-cycle growth can be observed under the action of arsenic pressure,and the quantum dot size increases at high arsenic pressure and the density of the quantum dots decreases.(3)At the growth temperature of 480 ?,the quantum dots obtained by growing single-cycle In GaAs / Al GaAs / GaAs quantum dots are well,uniform in size and densely distributed.(4)The GaAs cladding is covered on a single cycle of InGaAs / AlGaAs / GaAs quantum dots,and the quantum dots are not completely masked.Quantum dots that are not completely submerged affect the distribution of quantum dots in the next cycle during the multi-cycle growth process,which is consistent with our future experimental requirements for multi-cycle quantum dots.