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Fabrication And Characterization Of Ga3+-doped LiNbO3 Crystal Optical Waveguides

Posted on:2019-10-23Degree:MasterType:Thesis
Country:ChinaCandidate:S RenFull Text:PDF
GTID:2370330593451505Subject:Optical Engineering
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Lithium niobate crystal has stable performance,wide bandwidth,good piez oelectric,ferroelectric,thermoelectric,electro-optic,acousto-optic,photorefractive.photo-elastic and nonlinear optical properties.Due to its excellent optical perf ormance and intrinsic defects,it is widely applied in optics field.In recent yea rs,there are many reports about the optical waveguides with Ti-diffusion in th e lithium niobate crystal,but its usage field is limited for its low photodamage threshold.The Ga3+-doped not only has the photorefractive resistance ability,but also is used to fabricate the gallium oxide?Ga2O3?waveguide.So we succ essfully fabricate the gallium-diffused optical waveguide on LiNbO3 substrate.The main research has been followed in this paper.?1?The fabrication and optical characterization of the Single-mode gallium-diffused channel waveguide.The waveguide is fabricated by depositing a Ga2O3 film of thickness 127±2nm on a substrate of dimensions 15*10*0.5mm.T he diffusion process is then performed at 950oC for 2 h.The study demonstrat es the waveguide support the TE mode and the TM mode at 1547nm.The pro pagation loss is 0.5dB/cm for TE?1.0dB/cm for TM?.?2?The fabrication and optical characterization of the Single-mode Ti:Ga:E r:LN channel waveguide.A 18nm Erbium film is deposited on substrate by the RF sputter system.The diffusion process is at 1130oC for 120 h.Then the 8um Ti-strape is defined by the indiffusion technology at 1060oC for 8h.Finally A 140nm Ga2O3 film is deposited on the sample.The following diffusion pro cess is at 1060o C for 1h.The result is obtained that the Ga2O3-doped stripe w aveguide improves the photodamage resistance ability effectively...
Keywords/Search Tags:Lithium niobate crystals, Diffusion, Optical waveguides, Mode field
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