Fabrication And Characteristic Of Nano Structures By Laser-interference-induced Backward Transfer Technique

In recent years,laser-induced transfer as a new fabrication method with laser technology development.It shows more efficient,convenient and other advantages than traditional laser technology.Then,laser-induced backward transfer as the branch of laser-induced transfer?LIBT?technology has shown the potential application in the fabrication of micro and nano structures for the metal,semiconductor,and ceramics,due to its advantage such as high efficient and pollution-free.The size of particles less than the laser wavelength can be obtained by LIBT,and can be suitable for most metals and semiconductor materials.Nowadays,the new method was presented based on the laser interference lithography and the LIBT to realize the fabricating of the micro and nano structures for the high effectivity,large area,under atmosphere.In this thesis,a new micro-nano structures fabrication method had been designed to combine with laser interference and laser-induced backward transfer.And the experiment was verified,in which the Nd:YAG nanosecond laser was used to the energy source,and the silicon and gold were used as the transfer donor.The main tasks are as follows:1.The mechanism of laser and semiconductor interaction had been studied and the effect of multi-pulse laser accumulation on the semiconductor threshold energy had been analysed.The light intensity distribution under two-beams interference is simulated by MATLAB.The Si nanostructures had been fabricated by two-beam LIIBT at laser fluence is 45-115 mJ/cm²,laser pulse number are 100 and 200.The experimental results were analysed by SEM,EDS,Raman spectra,and photoluminescence spectra.2.The mechanism of laser and Au thin film interaction had been studied,and the light intensity distribution of three-beam interference at different polarization angles is simulated by MATLAB.The Au nanostructures had been fabricated by three-beam LIIBT at laser fluence are 15-30 mJ/cm²,Au thin films are 50 nm and 200 nm.The experimental results were analysed by SEM and EDS.Besides,the SERS of the 10^-5M?10^-7M and 10^-9M Rhodamine 6G on Au nanostructures had been studied,which is shown the potential application of LIIBT in the filed of high sensitivity detection.3 Using quartz glass as receiving material to realize the silicon wafer an Au thin film nanostructures fabrication by LIIBT,the nanostructures were analysed by SEM.This study is designed to prove the wide applicability to different materials micro-nano structures fabrication by LIIBT.