Development Of Electronic System Based On Position Sensitive Detector

In space detection and neutron shooting experiments,it is necessary to detect the incident position information and energy information of charged particles.According to the characteristics of position sensitive detectors,an electronic readout system for position sensitive silicon detectors is developed in this paper.A preliminary test was carried out on the resolution and energy resolution capabilities,and the effect of the four factors of detector thickness,area,incident electron energy and angle on the position resolution of the position sensitive detector was simulated by Monte Carlo method.The main contents include: structure and principle of position sensitive detector,design of pre-amplifier circuit,circuit simulation,PCB circuit board design and testing,debugging of acquisition system,detector position performance test,and simulation of the thickness and detector of the detector The effect of area,incident energy of charged particles,and incident angle on detector position resolution.The electronic readout system of the detector,that is,the amplifier circuit system and the acquisition system,are important influencing factors that determine the quality of the detector's detection results,and play an important role in the small signal amplification and signal acquisition of the detector.The detector electronics readout system designed in this paper initially meets the experimental requirements.After testing,the electronic signal reading system can successfully read the electrical signal generated by the 241 Am emitting alpha particles hitting the position sensitive detector,and preliminary detection of the detector's position resolution on the x-axis and y-axis is respectively effective About 83% and 76%,the energy resolution is about 4.5%.Using FLUKA simulation software,taking electrons as the research object,the effects of electron incident energy,direction,detector thickness,sensitive area and other factors on the position resolution of position sensitive silicon detectors were analyzed.The simulation results show that as the incident electron energy increases,the position resolution of the detector deteriorates first and then gradually becomes better;when the electron energy is completely absorbed by the detector,the position resolution of detectors of different thicknesses is basically the same,and the detector cannot be completely When absorbing electron energy,the position of the thicker detector is relatively poor;when the area of the detector is limited,and the electron escapes from the side of the detector,the detection position of the electron by the detector will be concentrated between the incident point and the side Time affects the position resolution ability;when the electron incidence angle(0 ~ 45 °)enters the 1mm thickness detector,the detected electron incidence position will shift along the incident direction,thereby reducing the position resolution ability of the detector.