With the consumption of fossil fuels,people are more and more concerned about the development of sustainable energy,photoelectrochemical(PEC)water splitting is one of the most promising way to convert solar energy into H2,store solar energy to produce clean and renewable hydrogen fuel under light condition.However,the overall efficiency of PEC is still too low to meet the demand for practical applications.In recent years,photocatalysts of metal oxide containing bismuth have become the focus of many researchers,such as Bi2O3,BiVO4and CaBiVMO8.Bismuth vanadate(BiVO4),as an n-type semiconductor,is one of the most promising photoanode materials for PEC.It possesses an appropriate valence band of 2.4 V(vs.RHE)for oxygen evolution reaction(OER)along with a narrow band gap(2.4 eV),which can absorb sunlight below 516 nm.In addition,BiVO4 is an ideal photoanode material due to its vast reserves,low cost and high stability in neutral solutions.This thesis comprehensively reviews the basic principles,experimental methods,basic approaches for the modification of semiconductor materials and the recent research of BiVO4photoanodes.This research mainly focuses on the preparation and modificati of BiVO4 for improvement of its PEC performance.We further analyze the enhancement mechanism behind,which provides a useful knowledge for improvement of the efficiency of PEC.The details of this thesis are summarized as follows:1.W doping effect on BiVO4 photoanodeFirstly,BiVO4 is prepared by dip coating method,followed by drying at room temperature.An orange product is obtained and the effect of W doping and film thickness of BiVO4 are futher studied.High efficiency of BiVO4 electrode is prepared by doping,showing that the site of V is replaced by W.Different W doping concentrations of W:BiVO4 electrodes are prepared and characterized,of which the W:BiVO4 electrode with 7.5%doping concentration has the best PEC performance.W:BiVO4 electrodes with different thicknesses are prepared to obtain the best film thickness.UV-visible spectrum shows W:BiVO4 has a larger wavelength absorption range than plain BiVO4,corresponding to a narrower band gap.All these ensure that visible light photoactivity of W:BiVO4 is better than BiVO4.It is found that the photocurrent of W:BiVO4 can reach about 1 mA/cm2 at 1.8 V(vs.RHE)and 60%increase than BiVO4,which is only about 0.41 mA/cm2.Besides,W:BiVO4 has more negative onset potential than BiVO4,which indicates that W:BiVO4 electrode can effectively improve the OER kinetics.The AC impedance spectroscopy analysis shows that W:BiVO4 has a lower resistance in the visible region than BiVO4,which symbols that the electrode effectively promotes the transport of the electron inside the photoelectrode and inhibit the recombination of the electron-hole pair.2.Multi-metal oxide modified W:BiVO4 electrode synthesis and the study of PECperformanceAfter the optimization of W:BiVO4,I prepare a multi-metal oxide catalyst based heterojunction W:BiVO4-FeCoW photoanode by a sol-gel approach and analyze its crystal structure,surface morphology,LSV curve and UV-vis spectrum for exploration of the enhancement mechanism of its PEC.I find a good heteronanostructure formed between FeCoW and W:BiVO4 by analyzing its morphology.By analyzing the PEC properties,this multimetal oxide catalyst coated W:BiVO4 photoanode exhibits a greatly enhanced photocurrent by2.8 times at 1.23 V(vs.RHE)and significant shift of the flat-band potential by 421 mV in comparison to W:BiVO4 photoanode.The performance improvement should be attributed to that W:BiVO4-FeCoW can significantly inhibit the recombination of the electron-hole pairs,enhance charge transport and light absorption,and finally promote the efficiency of PEC reaction.In summary,the OER kinetics of BiVO4 photoanode can be greatly improved by W doping and the W:BiVO4-FeCoW heterojunction.I successfully prepared the BiVO4-based photoanodes and improve the dynamic mechanism of their PEC reaction,significantly broaden the absorption range of visible light for efficient photoelectrochemical water splitting. |