| In recent years,iron-based compounds have attracted much attention due to their unique physical and chemical properties.For example,it shows good performance in energy conversion,such as oxygen reduction reaction,electrocatalysis,batteries and supercapacitors.In addition,high saturation magnetization and stability make iron carbide nanomaterials used in biomedical and magnetic storage.Generally,iron carbide nanomaterials are synthesized by reduction carburization,thermal decomposition and chemical vapor deposition.However,the size and morphology of carbide particles generated by high temperature or complex processes can not be controlled in the current synthesis routes,and most reports show that iron carbide nanoparticles are mainly by-products in the synthesis process of carbon materials.In this paper,iron carbide thin films were successfully deposited by plasma enhanced atomic layer deposition,using Fe(tBu2AMD)2 or Fe(tBu2DAD)2 as precursors and hydrogen plasma as coreactant.The effects of deposition temperature and discharge time on the composition and properties of the films were studied.In particular,the precursor of Fe(tBu2DAD)2 decomposes at 150-230℃,and iron thin films are successfully deposited by pulsed chemical vapor deposition.The main results are as follows:（1）Fe(tBu2AMD)2 precursor was used for the first time to deposite iron carbide thin films by hydrogen plasma enhanced atomic layer deposition.The film exhibited good layer-by-layer growth behavior with a growth rate of 0.041 nm/cycle at a wide temperature window（80-210℃）.The effects of deposition temperature and plasma time on the composition and structure of the films were studied.The electrochemical hydrogen evolution properties of the high purity,continuous and smooth nickel carbide films were studied by conformally depositing on the conductive carbon cloth at 90℃.（2）For the first time,Fe(tBu2DAD)2 precursor was used to deposite iron carbide thin films by plasma enhanced atomic layer deposition.The growth rate of the film is 0.068nm/cycle at a relatively narrow temperature window（80-130℃）.The electrochemical hydrogen evolution performance of iron carbide film was studied by conformally depositing on the conductive carbon cloth at the deposition temperature of 90℃.In particular,the morphology,composition and structure of Fe(tBu2DAD)2 precursor films deposited by pulsed chemical vapor deposition at thermal decomposition temperature（150-230℃）with hydrogen or hydrogen plasma as coreactant were studied.The electrochemical oxygen evolution properties of nickel carbide doped with a certain proportion of the film were preliminarily studied. |
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