The Study Of Flexible Resistive Memory Based On BaTi_0.95Co_0.05O₃ Thin Films

With the rapid development of the electronics industry,people are increasingly demanding the miniaturization and portability of storage devices in recent years.In view of the fact that dynamic random access memories and flash memories are confronted with the limitations of process technology,non-volatile resistive random access memory(RRAM)has aroused extensive attention and in-depth study.It can become one of the most promising non-volatile memories of the next generation due to its simple structure,high storage density,fast reading and writing,and high integration.At the same time,with the rapid rise of smart wearable devices and flexible display devices,more and more attention has been paid to transparent flexible resistive memory.In this thesis,BaTi0.95Co0.05O3 thin film was grown on inorganic flexible mica substrate with a thickness of 10 μm by pulsed laser deposition.The grown film is along the[110]orientation and displays nanometer-scale smooth surface.We also successfully prepared SrRuO3/BaTi0.95Co0.05O3/Au resistance-switching device,and studied the performance of the resistive device in both flat and bending states.The main progress is as follows:(1)Conductive filaments are formed by the migration of Oxygen vacancy-based defects in BaTi0.95Co0.05O3 films under the action of electric field,which makes the SrRuO3/BaTi0.95Co0.05O3/Au memory shows good resistive-switching characteristics.The memory cells show bipolar resistive-switching and the high/low resistance ratio is up to 50.The resistive-switching properties show no obvious changes within 2×104 s or during 105 writing/erasing cycles.In addition,the transmittances of the mica/SrRuO3/BaTi0.95Co0.05O3 are over 50%for visible light with a wavelength of 500-800 nm.(2)The SrRuO3/BaTi0.95Co0.05O3/Au memory grown on a flexible mica substrate retains excellent resistive-switching characteristics and excellent flexural properties.The resistive-switching properties show no obvious changes after the memory being bent to 3 mm radius for 104 times.With a 2.2 mm bending radius,the ratio of high/low resistance is over 50,and the information writing/erasing cycles are over 3.6×105.The surface morphology of BaTi0.95Co0.05O3 film after being bent to a 1.4 mm radius is the same as that of the original flat film.Most importantly,the memory that is able to work properly at 25-180 ℃ or after being annealed at 500 ℃,shows great temperature and illumination endurance.In summary,it is significant to study the resistance-switching characteristics of mica/SrRuO3/BaTi0.95Co0.05O3/Au resistive devices in the flat and bending state in this thesis.It provides experience for the research on the new flexible resistive-switching memory,which is meaningful for potential industrialization and practical application.