The Study Of Transfer-free Graphene Growth On Nonmetallic Substrates

Graphene has excellent application prospects in many fields due to its excellent electrical,optical and mechanical properties.It is known as black-gold in the material world.In the field of semiconductors,graphene has been placed high hopes by human,and it is hoped that graphene can supplement silicon materials.Although it is now possible to produce large-area,high-quality single-layer graphene,these graphene are grown on metal substrates.If they are to be applied to the semiconductor field,graphene must be transferred to another substrate.The process will be more or less destructive to graphene,which will degrade the quality of graphene.This is also an important factor that restricts the rapid development of graphene.For this reason,some researchers have proposed the concept of transfer-free growth,specifically,a growth method that uses chemical vapor deposition(CVD)to grow graphene on nonmetallic substrates and does not perform transfer.This transferfree method is to avoid the destruction of graphene during the transfer process,which is of great significance for the preparation of electronic devices from the graphene.At present,there are relatively few people studying the method of transfer-free graphene growth,and the corresponding research is still in the initial stage.Therefore,this article has carried out corresponding in-depth research on the basis of previous research.Mainly on the research of transfer-free graphene growth based on SiO2 and GaN substrate.In addition to the study of transfer-free graphene growth,this paper also focuses on vertically-oriented graphene,and explores the preparation of verticallyoriented graphene.This work was supported by National Key R&D Program of China(Grant No.2017YFB0403100,2017YFB0403102),The following is the main research content of this article.1.Using silica as nonmetallic substrates for transfer-free growth,metal Ni was used as a catalyst,and the growth conditions were optimized by varying the growth temperature,gas flow rate,and the thickness of the metallic Ni,and transfer-free graphene growth on silicon dioxide substrate was realized.2.On the basis of silica-based transfer-free graphene growth experiments,similar experiments were performed on GaN substrates.We found that Ni and GaN have adverse reactions.The method is not suitable for performing on GaN substrate.3.Using plasma-enhanced technology to assist in the growth of transfer-free graphene on nonmetallic substrate,we investigated the optimal conditions for the growth of graphene on GaN substrates under plasma enhanced chemical vapor deposition(PECVD).4.The transfer-free graphene growth on nonmetallic substrates was studied by using organic compounds as carbon source,and explore the formation process of graphene.5.The use of PECVD technology to explore the growth conditions of vertical graphene,by adjusting the growth of the plasma power,gas ratio and temperature and other conditions,the successful exploration of vertical graphene growth conditions.