’One Pot’ Fabrication And Photoelectrochemical Performance Of Cu₂O P-n Homojunction

Cu2O is a kind of promising material for solar cell,Naturally,Cu2O behaves p-type semiconducting conductivity,n-type Cu2O can be obtained artificially by controlling preparation conditions.Generally,Cu2O p-n homojunction was electrochemically fabricated by two steps,in which p-type Cu2O was deposited in a basic solution as well as n-type Cu2O was deposited in an acidic solution.In this study,Cu2O thin films were fabricated in a basic solution by varying the deposition time.The results show that Cu2O thin films with p-type semiconducting behavior were obtained as the deposition time is short and that with n-type semiconducting behavior were obtained as the deposition time is long.By through means characterizations,such as XRD,SEM and PEC,it is found that Cu2O film deposited with long time formed p-n homojunction,in which a layer of p-type Cu2O thin film inside and a layer of n-type Cu2O thin film outside.