| Piezoelectric materials have been widely used intransducers,sensors,actuators and so on.Although PZT-based materials have excellent physical properties,high levels of lead oxides(70 wt%)inevitably cause environmental problems during preparation and processing.Therefore,lead-free piezoelectric materials have attracted more and more attention.Since 2000,research and development of lead-free piezoelectric materials have made significant progress,but its physical properties are not good enough to completely replace PZT.Therefore,it is necessraty to develop new high-performance perovskite lead-free piezoelectric ceramics.In this thesis,a series of lead-free ceramics have been developed and prepared and their crystal structure,microstructure and electrical properties have been systematically investigated.The main contents and results were summarized as below:1.(1-x)BaTiO3-xCaHfO3 ceramics were prepared by a conventional ceramic technique and the phase transition,microstructure and electical properties of the materails were investigated.All samples have a perovskite crystal structure.With the increase of CaHfO3(x),there are different phases coexistence.Rhombohedral(R),orthogonal(O)and tetragonal(T)phases coexist in the composition with x=0.08,resulting in the largest values of piezoelectric coefficient(d33400 pC/N),inverse piezoelectric coefficient(d*33547 pm/V)and plane electromechanical coupling coefficient(kp58.2%).This is because the composition located at a region where the R-O-T three ferroelectric phases coexist would have the lowest energy barrier and thus greatly promote the polarization rotation,resulting in a strong piezoelectric response.2.(1-x)BaTiO3-xCaSnO3 lead-free ceramics were prepared by an ordinary solid-state sintering method,and the relationship between the phase structure and the piezoelectricity of the materials was studied to ascertain potential factors for strong piezoelectric response.When 0.00≤x≤0.06,the ceramics exhibit the coexistence of orthogonal(O)and tetragonal(T)phases.At x=0.08,the ceramic has a ferroelectric coexistence of rhombohedral,orthogonal and tetragonal(R-O-T)phases.When x is increased to 0.10,the phase structure of the ceramics is transformed into the R-O phases coexistence.And the R phase and cubic(C)phase coexist in 0.12≤x≤0.14.For x=0.08,the ceramic exhibits the lowest energy barrier and thus promotes polarization rotation and extension,resulting in the optimal piezoelectricity of d33 and kp values of 550 pC/N and 60%,respectively.3.A new(1-x)(K0.5Na0.5)NbO3-x[NaSbO3+Bi0.5(Na0.8K0.2)0.5(Zr0.5Hf0.5)O3]lead-free ceramics were designed and prepared by a conventional solid state method and the relationship between phase structure and piezoelectricity in ceramics was studied.As x increases,the rhombohedral-orthorhombic phase transition temperature(TR-O)and the orthorhombic-tetragonal phase transition temperature(TO-T)are shifted toward room temperature simultaneously.When x=0-0.01,the ceramics exhibit a typical O phase structure.When x=0.02-0.03,the ceramics possess the coexistence of O and T phases.At x=0.04-0.05,three ferroelectric phases of R,O and T coexist.When x is increased to 0.06,the phase structure is transformed to R phase.When R-O-T three ferroelectric phases coexist in the materials,the free energy of the ceramics is unstable,resulting in a large increase in piezoelectricity.At x=0.04,the ceramic has excellent piezoelectric properties of d33=452 pC/N,kp=63%andεr=4414.4.[(Bi1-xLax)0.5Na0.5]0.94Ba0.06(Ti1-5y/4Nby)O3 ceramics were prepared by a conventional solid state method.All ceramics can be sintered well at 1200 oC and have small grain sizes(1.5μm),which increases the dielectric breakdown strength(DBS)of the ceramics.Furthermore,as the content of La3+and Nb5+increases,the P-E loop appears to be significantly refined,the residual polarization is significantly reduced,and the maximum polarization remains the same large value as the ceramic without La3+and Nb5+doping.Therefore,high storage density and discharge efficiency are achieved at x/y=0.07/0.02,resulting in the large storage density of 1.83J/cm3 and high discharge efficiency of 70%. |