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Effect Of Defects On Photoelectrochemical Performance For G-C3N4/TiO2 Nanocomposite

Posted on:2020-08-13Degree:MasterType:Thesis
Country:ChinaCandidate:L M XiaoFull Text:PDF
GTID:2381330575497913Subject:Physical chemistry
Abstract/Summary:PDF Full Text Request
Titanium oxide(TiO2),compared with other semiconductor catalysts,has received much attention due to its strong oxidizing ability,better ultraviolet absorptivity,good dispersion,nontoxicity,high chemical stability and other advantages.In various forms of TiO2,the well-organized array structure of TiO2 nanotubes exhibits unique photoelectrochemical properties due to larger specific surface area,better adsorption capacity and convenient for recycling.However,the photocatalytic efficiency of TiO2 is significantly limited due to its wide bandgap.The main approach to improve photocatalytic performance of semiconductor is to design and construct composite semiconductor materials.Graphitic carbon nitride(g-C3N4),as a new semiconductor,can be combined with TiO2 to increase the transfer of photogenerated carriers and the utilization rate of light.However,the type-II composite semiconductors have relatively weak reduction and oxidation capacity.The subject is worth investigating on heterostructure construction with both fast separation efficiency of electron-hole and strong redox ability by the effective charge transport at the interface of composite semiconductors.The g-C3N4/TiO2 nanocomposite with interfacial vacancy were constructed using TiO2 nanotube arrays using TiO2 nanotube arrays as precursor.The effect of different defects and the thickness of vacancy layer at the interfacial of g-C3N4/TiO2 on the optical absorption,photoelectrochemical performance and visible photocatalytic degradation of pollutants was thoroughly studied.The main work was divided into three parts:(1)The g-C3N4/OV-TiO2 heterostructures containing an interfacial oxygen vacancy layer were sequentially constructed by anodic oxidation,NaBH4 reduction,and vapor deposition methods.The effect of oxygen vacancy layer thickness on the photoelectrochemical properties of g-C3N4/OV-TiO2 nanocomposite was also studied.SEM images indicate that the structure of TiO2 nanotube arrays kept stable after NaBH4reduction.The UV-vis DRS results shows that the g-C3N4/OV-TiO2 nanocomposite exhibits enhanced visible light-harvesting ability compared with that of single TiO2 or g-C3N4/TiO2 samples.XPS and ESR results show that oxygen vacancy were formed on the surface of TiO2 by NaBH4 reduction.When the concentration of NaBH4 aqueous solution is 3 M,the photocurrent of g-C3N4/OV-TiO2 reached a maximum(0.7 mA/cm2)at 1.23 V vs.RHE,8 times higher than that of g-C3N4/TiO2 without interfacial oxygen vacancy layer.Compared with single TiO2 and g-C3N4/TiO2,g-C3N4/OV-TiO2 exhibits the highest photocatalytic activity for methyl orange degradation under visible light,and the photocatalytic degradation rate reached almost100%within 60 minutes.The time-resolved fluorescence decay spectra further indicate that the existence of interfacial oxygen vacancy is beneficial to the transfer of photogenerated carriers between g-C3N4 and TiO2,thus contributing to the improvement of photochemical properties of composite semiconductors.The mechanism of g-C3N4/OV-TiO2 nanocomposite was analyzed by fluorescence capture experiment and density functional theory(DFT)calculation.(2)The particle size of g-C3N4 has significant effect on the photochemical properties of g-C3N4/OV-TiO2 nanocomposite.Therefore,the protonated g-C3N4/OV-TiO2 nanocomposite(p-g-C3N4/OV-TiO2)can be obtained by protonating g-C3N4 with HCl and then coupled with OV-TiO2.The SEM images show that the g-C3N4 nanosheets become thinner and smaller in size after protonation treatment.The XRD images indicates that the characteristic peak of g-C3N4 shifts slightly to a low angle at about 27.4°.This is due to the loosening of the layered structure caused by H+intercalation between g-C3N4 layers in HCl after protonation treatment of g-C3N4.The results of photoelectrochemical properties show that the photocurrent density of g-C3N4/OV-TiO2 is higher than that of g-C3N4/OV-TiO2 when the concentration of hydrochloric acid is 6M,which is about 1.4 times higher than that of g-C3N4/OV-TiO2,p-g-C3N4(6 M)/OV-TiO2 exhibits the highest photocatalytic activity of methyl orange degradation under visible light irradiation.(3)Nitrogen-vacancy g-C3N4/TiO2 nanocomposite(TiO2/g-C3NX-Y)was obtained by deposition the nitrogen-vacancy g-C3N4 on the surface of TiO2 nanotube arrays by chemical vapor deposition.The nitrogen-deficient g-C3N4 was prepared by treating urea with potassium hydroxide solution-assisted route.Form XRD spectra it can be seen that the characteristic peak of(100)crystal plane of g-C3N4 is weakened after alkali solution treatment compared with pure g-C3N4,which show the structure of triazine unit in the plane of g-C3N4 changed and the g-C3N4 containing nitrogen defect was successfully obtained.From the N 1s XPS spectra of TiO2/g-C3NX-Y,it can be seen that the peak of C-N=C decreases gradually with the increase of KOH content,which indicates that nitrogen defects are formed on the surface of g-C3N4.The photocurrent density of TiO2/g-C3Nx-0.006 is the highest,which is about twice as high as that of g-C3N4/TiO2.TiO2/g-C3Nx-0.006 exhibits the highest photocatalytic activity under visible light irradiation among all samples.Nitrogen vacancy concentration has an important effect on the photochemical performance of all samples.The appropriate nitrogen defect concentration as the interfacial vacancy could promote the transfer of photoconductive carriers in TiO2/g-C3NX-Y nanocomposite,which is more conducive to the improvement of photocatalytic performance.
Keywords/Search Tags:TiO2 nanotube arrays, g-C3N4, vacancy, interfacial charge transport, photoelectrochemical performance
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