Studies On Preparation Of Mg Doped CuCrO₂ Transparent Conductive Films By Sol-gel Method And Physical Properties

P-type metal oxide transparent materials have a wide range of applications in light emission and display,solar cells,etc.Because binary p-type metal oxide transparent conductive materials have poor conductivities,ABO₂ ternary metal oxides with a copper-iron ore structure have attracted more attention after a breakthrough in both theoritical and emperimental researches.CuCrO₂ has many advantages like simple and diverse preparation methods,chemical stablility,and good photoelectric performance,and has become a research hotspot.In this paper,CuCrO₂ films with cation vacancies and Mg-doping were prepared by the gel sol method.The effects of vacancy defects,doping concentration and first pre-annealing temperature on the photoelectric properties of CuCrO₂ films were studied.The main research contents are as follows:1.In order to study the effect of self-defects on the photoelectric properties of materials,CuxCrO₂ thin films with Cu deficiency were prepared by sol-gel method.XRD and transmission spectra show that only Cu vacancies have minor effect on the formation of CuCrO₂,but affect the size of the grains.With the increase of the vacancy content,the grain size becomes larger.On the contrary,Cr vacancy will prevent the formation of CuxCrO₂.2.CuCrO₂: Mg thin films with various doping concentrations were obtained.The crystal structure,conductivity,and transmittance of the thin films at different doping concentrations were studied.With the increase of the Mg doping concentration the resistances of CuCrO₂: Mg thin films increase nonlinearly and reach the maximu of 0.3 at 8% doping.On the other hand,higher doping concentration than 8% will lead the formation of the MgCr2O4 impurity.3.The effects of the pre-annealing temperature on the photoelectric performance of the thin film was also studied.The crystal structure,conductivity,and transmittance of the CuCr O₂: Mg thin film were measured when the pre-annealing temperature is 400 ℃,500 ℃,600 ℃,and the second annealing temperature is 800 ℃.It is shown that the pre-annealing temperature results in different intermediate product content which primarily affected the final of the thin film and their photoelectric performances.When the pre-annealing temperature is 500 ℃,the conductivity of the film reach the highest value of 0.53 S/cm.