Study On The Process Of Polishing Single Crystal Sapphire With Mixed Abrasives

Because of its excellent physical and chemical properties,single crystal sapphire has broad application prospects in the field of defense weapons and people's livelihood.High-performance equipment has very strict requirements on the surface quality of single crystal sapphire.It is very necessary to improve the surface quality of single crystal sapphire by polishing.Among many polishings,chemical mechanical polishing is the only widely recognized technology that provides global planarization.However,the current chemical mechanical polishing technology generally has the problem of low polishing efficiency.In order to improve the polishing efficiency,this article optimizes the polishing slurry by comparing the effect of single abrasive and mixed abrasive on the polishing performance of single crystal sapphire.Then,the polishing process parameters are optimized under the simulation parameters of the abrasive trajectory.The main work carried out includes:1)The effect of different abrasives on the polishing performance of single crystal sapphire substrateAccording to a certain proportion,three different polishing slurries were configured,and the single factor experiment method was used to compare and analyze the effects of three different abrasives on the surface roughness,material removal rate and surface morphology of sapphire polishing.Crystal sapphire works best.2)Calculation and simulation of abrasive particle trajectoryThrough the analysis and calculation,the model of the abrasive trajectory relative to the workpiece surface is established.Matlab is used to simulate the trajectory of the abrasive particles on the workpiece surface at different speed ratios,eccentric distances,radial distances and the initial angle of the abrasive particles The law of abrasive trajectory The final result shows that when the speed ratio is 60 mm,the material removal rate of the polishing slurry to the workpiece is the largest.3)Optimization of chemical mechanical polishing process parametersThe main factors affecting the chemical mechanical polishing are selected.With reference to the material removal rate MMR and the surface roughness Ra during the polishing process,the orthogonal process is used to optimize the chemical mechanical polishing process parameters.Taking material removal rate as the leading factor,on the basis of considering surface quality,the best polishing process parameters:polishing pressure 25kpa,polishing disc rotation speed 80r/min,polishing fluid flow rate 100ml/min,eccentricity 15mm.