Performance Testing And Analysis Of InAs Quantum Dots And Sb Compound Lasers

Low-dimensional semiconductor materials with unique electrical and optical properties are of great significance not only in fundamental physics research but also in the fabrication of optoelectronic devices.Quantum-dot lasers have the advantages of narrow linewidth,large gain,low threshold,and are widely used in the field of communications.Quantum well lasers have the advantages of small frequency,high carrier utilization,and high differential gain coefficient.Among them,Sb compound quantum well lasers have broad application prospects in environmental monitoring and medical diagnostics.Therefore,it is of great significance to study quantum dots and Sb compound quantum well lasers.This dissertation mainly studies the performance of GaAs-based InAs quantum dot lasers,Ge-based InAs quantum dot lasers,and mid-infrared GaSb-based InGaAsSb/AlGaAsSb quantum well lasers,including device output characteristics,spectral tuning characteristics and characteristic temperatures.The test results show that the GaAs-based InAs QDs can emit light in the 1.3?m band of the low-loss window of the fiber communication,the Ge-based InAs QDs emit light in the 1.2?m band,and the GaSb QWs can work in the 2.0?m band.The paper is mainly divided into the following sections:1.Introduced the molecular beam epitaxy technology,the basic working principle of the semiconductor laser,the craft making and the test system.2.The output performance,spectral tuning characteristics and device characteristic temperature of GaAs-based InAs quantum dot lasers are studied in detail.The experimentally measured GaAs-based InAs quantum dot lasers have a near-laser wavelength of 1.3?m.The characteristic temperature of the laser is 40 K,and the output power is 30 mW.The device performance decreases with increasing temperature.The tuning of the lasing wavelength of the device under changes in temperature and injection current is achieved.Among them,under the current tuning,the lasing wavelength range is about 1315-1325 nm,and it moves 10 nm.The wavelength range of lasing wavelength under temperature tuning is about 1320-1332 nm,12 nm is moved.3.The characteristics of Ge-based InAs quantum dot lasers were measured.The laser output characteristics,spectrum and characteristic temperature of the devices were measured.The experimentally measured device has a luminous wavelength of 1.2?m,a characteristic temperature of 41K,and an output power of 16.7mW.Compared with Ge-based In As quantum dot lasers and GaAs-based InAs quantum dot lasers with the same material structure,the performance of Ge-based InAs QD lasers is similar to that of GaAs-based InAs QD lasers.Our group has already had Ge-based quantum dot material growth and laser fabrication capabilities.4.The performance of the GaSb-based InGaAsSb/AlGaAsSb quantum-well laser was measured.The experiment shows that the laser can emit light in the 2.0?m band,and the laser's threshold current density is 135 A/cm² when the laser is infinitely long.Next,the device has a quantum efficiency of 61.1%,an internal loss of 8.3 cm^-1,an oblique efficiency of 112 mW/A,and an output power of 72 mW in the CW mode.At the same time,the spectral tuning characteristics of the device were also studied.Among them,the wavelength red shift range of the cavity length tuning is 2023-2046nm,and the red shift is 23nm.Under the current tuning,the lasing wavelength range is 2038.7-2048.2 nm,the movement is 9.5 nm.