Quantum transport theory for nanostructures: Application to STM-tip-induced quantum dots and MOSFETs

The subject of the thesis is electron transport in advanced semiconductor devices with focus on two classes of devices: nanoscale metal-oxide field-effect transistors (MOSFETs) and scanning-tunneling microscope (STM)-tip-induced quantum dots.; The first part of the work is devoted to the investigation of the electron quantum transport in nanoscale transistors. Si-based MOSFETs with typical sizes about 100 nm have found an application in highly integrated systems. The mechanism of the electron transport in these devices differs from that in devices with sizes of 50 nm and below. The conventional devices are described by the Boltzmann transport equation. This theory focuses on scattering-dominant transport, which typically occurs in long-channel devices. On the contrary, in a structure with a characteristic size of the order of the mean free path, the electron transport is essentially ballistic.; Downscaling MOSFETs to their limiting sizes is a key challenge for the semiconductor industry. Detailed simulations that capture the physics of carrier transport and the quantum mechanical effects that occur in these devices complements experimental work in addressing this challenge. Furthermore, a conceptual view of the nanoscale transistor is needed to support the interpretation of the simulations and experimental data as well as to guide further experimental work. The objective of this part of the work is to provide such a view by formulating a detailed quantum-mechanical transport model and performing extensive numerical simulations. We have developed a model along these lines for the nanosize MOSFETs with different device geometries.; In this work two types of transistors are investigated: single-gate and double-gate structures. It is shown that an ultra-thin double-gate silicon-on-insulator MOSFET demonstrates the capability of delivering a remarkably high saturation current as compared with a single-gate structure. The results of the investigation of the electron quantum transport in the nanoscale transistors can be used for practical device simulation.; The second part of the dissertation investigates a special and unique type of quantum dot that can only be studied by using STM. It is the so-called tip-induced quantum dot. When a bias is applied between the metallic STM-tip and the semiconductor sample (in our case, a GaAs/Al_0.25Ga _0.75As multilayer structure), the electric field extends into the semiconductor structure, and a hole or an electron accumulation layer can be formed under the tip. (Abstract shortened by UMI.)...