n-channel beta-silicon carbide MOSFET

Beta silicon carbide (beta-SiC) is a promising semiconductor material. Its bandgap (2.2 eV), thermal conductivity (4.9 W/cm.{dollar}spcirc{dollar}K), saturated drift velocity (2.5 {dollar}times{dollar} 10{dollar}sp7{dollar} m/sec) and many other characteristics are advantages for high temperature, high power and high frequency applications. Furthermore, its resistance to diffusion and its high breakdown electric field (2 {dollar}times{dollar} 10{dollar}sp6{dollar} V/m) present the possibility of high device densities. These advantages have long been recognized, but have not yet been utilized because of difficulties in single crystal beta-SiC synthesis.; In this thesis, the feasibility of developing n-channel inversion mode beta-SiC MOSFETs was studied and demonstrated. Epitaxial growth, materials processing and device processing procedures were developed, and employed to fabricate MOS capacitors and MOSFETs. The inversion characteristics of beta-SiC MOS capacitors were observed in dark for the first time. An in-situ doping technique was successfully incorporated into the fabrication of prototype recessed source/drain MOSFETs; we thus demonstrate that TiC{dollar}sb{lcub}rm x{rcub}{dollar} is a suitable substrate for beta-SiC MOSFET structures.