| The ability to control spatial distributions of electrically active impurities in silicon (Si) by appropriate thermal processing is central to synthesis of solid state electronic devices based on Si. Spatial control is exercised by gettering processes, meaning segregation or precipitation of the impurities of interest at lattice defects in the Si. The gettering transformations are microscopic, and understanding their mechanisms is required if they are to be employed effectively. Transmission electron microscopy (TEM) provides both structural and chemical analysis of solids at the near atomic resolution level, and was the experimental choice for the gettering mechanism research presented here.;Extrinsic gettering of several impurities by near-surface dislocations in Cu diffused CZ Si was investigated using TEM techniques. The dislocations were introduced into ;The near-surface dislocations were found to more effectively getter carbon and oxygen in the Cu diffused specimens. The carbon was gettered as a large number of small (;Cu was gettered as Cu... |
