Design And Fabrication Of 940nm Vertical Cavity Surface Emitting Laser And Study On Electrostatic Damage

VCSEL can be integrated on a small scale,has the characteristics of high reliability and low power consumption,and can be produced at low cost,so it is widely used.Since the advent of 3D facial recognition technology on iphones,VCSEL has attracted the attention of researchers,and the 940 nm vertical cavity surface emitting laser has become a new research hotspot.940 nm VCSEL has the characteristics of avoiding red storms and high conversion efficiency,becoming the most widely used near infrared light source in 3D detection systems in mobile devices.As the basic components of consumer electronics visual imaging and three-dimensional sensing,VCSEL is also expected to be applied to civilian and military laser radar and other fields.Since the active area of ??the VCSEL is very small,the sensitivity to electrostatic discharge(ESD)is very high.Even unintentional touch of a finger may degrade the performance of the device.ESD is difficult to prevent and detect.It is one of the reliability issues affecting most optoelectronic devices.Reliability issues related to electrostatic discharge will restrict the further expansion of the application of VCSELs.Based on the above background,this paper had carried out two aspects of work.First,the DBR and quantum well of the 940 nm vertical cavity surface emitting laser were designed and simulated,and the 940 nm VCSEL device was fabricated;on this basis,the fabricated VCSEL had been studied on the electrostatic damage failure.By actively performing electrostatic discharge damage on the vertical cavity surface emitting laser,measuring the photoelectric characteristics of the device,and microscopically analyzing the device,the electrostatic cavity damage phenomenon of the vertical cavity surface emitting laser were characterized for discrimination provide effective criterion for static damage failure.The main research works are as follows:1.Designed a 940 nm VCSEL structure and simulated it using the PIC3 D software in the Crosslight simulation platform.The results showed that when the oxide pore radius was 5 microns and the injection current was 10 m A,the device optical output power was 7.2m W.2.Researched the fabrication process of 940 nm VCSEL device to form a complete set of fabrication scheme.According to the device test analysis,under the injection current of 10 m A,the optical output power of the single device was 8.2m W,and the slope efficiency was 0.9W / A.3.The ESD damage of the prepared 940 nm VCSEL was studied.The forward and reverse ESD voltages were applied separately.After each ESD,the electrical and optical parameters of the sample were measured.Furthermore,the impacted device was corroded and the damage phenomenon after the impact was observed microscopically.After the forward and reverse ESD,the I-V curve of the device had a significant soft breakdown phenomenon,and the soft breakdown phenomenon of the device after the reverse ESD was stronger than the forward ESD.After ESD,the optical power of the device droped significantly,the threshold current increased,and the operating voltage also increased,but the far field divergence angle of the device decreased,unexpectedly making the beam quality better.Microscopic analysis of the various layers of the device revealed that Ga As on the surface was melted down,and there were obvious signs of damage around the oxide aperture.4.Due to the different oxidation rates,the oxide aperture of the prepared device were rhombic.After the device was electrostatically discharged,it was observed that the sharp corners of the diamond oxidation aperture were damaged seriously.The electric field distribution of the vertical cavity surface emitting laser with rectangular structure was simulated using Crosslight software.The simulation results showed that the electric field intensity at the boundary of the oxide aperture with rectangular structure was large.Then,the electric field distribution of the vertical cavity surface emitting laser with common axisymmetric structure was simulated.The comparison found that the electric field at the boundary of the oxide aperture of the ordinary circular oxide aperture device was smaller than that at the boundary of the oxide aperture of the rectangular structure.