Study Of The Optical,Electrical And Electrochemical Properties Of Nitrogen-Doped NiO Thin Films

As a promising p-type metal oxide semiconductor material,NiO has a wide range of applications in the fields of transparent conductive film,electrochromic electrode,chemical sensor functional layer and electrode material of supercapacitor.In different application fields,the optical,electrical and electrochemical properties of NiO thin films have different requirements,so it is of great significance to modulate the photoelectric and electrochemical properties of NiO thin films to adapt them to different application fields.The results show that adding impurities into NiO films is the most effective way to regulate the properties of NiO films.Magnetron sputtering has been widely used in the field of film preparation because of its advantages such as high sputtering rate,good film adhesion,high film-forming purity and the possibility of hybrid sputtering.In this paper,nitrogen-doped NiO films were prepared by magnetron sputtering in a mixture atmosphere of Ar and N₂,and the effects of substrate temperature and the percentage of N₂in the mixture atmosphere on the properties of nitrogen-doped NiO films were studied respectively.The main research contents of this paper are as follows:(1)Nitrogen doping NiO films were prepared on ITO conductive glass substrate by RF reactive magnetron sputtering at the substrate temperature of room temperature(RT),100?,200?,300?and 400?,respectively,and the effect of substrate temperature on the properties of nitrogen-doping NiO was studied.The results show that with the increase of the substrate temperature,the average transmittance of N-doping NiO films in the visible region decreases from 90%to 50%,the band gap energy decreases from 3.5e V to 3.08e V,the intensity of photoluminescence spectrum decreases,and the electrical conductivity increases.(2)Nitrogen-doping NiO films were prepared by RF reactive magnetron sputtering on ITO conductive glass substrate in Ar/N₂ratios of 100%/0%,80%/20%,60%/40%,40%60%and 20%/80%mixed atmosphere,respectively.The effect of N₂percentage on the properties of nitrogen-doped NiO films was studied.The results show that with the increase of N₂percentage,the transmittance of NiO films in the visible region decreases from90%to 55%,the band gap energy decreases from 3.75 e V to 3.47 e V,and the area specific capacitance increases from 13.4 m F/cm²to 61.4 m F/cm².Percentage of N₂nitrogen doping with 80%NiO films for the further study showed that as the current density is raised to 20times,film still maintains 60%of specific capacitance,has the good cycle stability at the same time,after a 10000-cycle capacity retention rather than down,instead of up to 104%,showing good cycle stability...