Based On Fabrication And Conduction Mechanism Of Semiconductor Heterojunction Memristor

In recent years,intelligent electronic devices and portable electronic products with the rapid development of miniaturization,the research of memristor change with each new day.However,no matter how the technology develops,ultimate goal is to find a memristor material with better storage performance,more environmental protection and longer storage life.Changing materials and finding new dielectric layers are important ways to improve the memory performance of the memristor and to solve the functional requirements of electronic products.At present,the storage mechanism of memristors regulated by environmental factors is seldom studied.In this paper,the regulation of PN junction memristor by different morphology of dielectric layer materials and environmental factors has been systematically studied and discussed.First of all,by the influence of water temperature on the Zn O morphology indicated that the successful preparation of lamella flower and sea urchin form two different morphology of Zn O structures,using spin figure technology preparation of Ag/Zn O/FTO have resistance devices and using electrochemical workstation for measurement,through data analysis we find that put forward the physical mechanism of forming process of conductive filament resistance switch to explain the memory behavior.The oxygen vacancy concentration on the surface of zinc oxide plays an important role in the regulation of photogenerated electrons,hole separation rate and energy band structure in zinc oxide.The higher the oxygen vacancy concentration,the more defects of zinc oxide,so it has a stronger storage capacity.Secondly,the composite Bi Fe O₃/Ti₃C₂ heterojunction structure was prepared by hydrothermal reaction,and the sandwich memristor of Ag/Bi Fe O₃/Ti₃C₂/FTO was prepared by rotating pattern method.The effect of light on the non-volatile memory performance of the device was studied.Light plays an important role in the carrier concentration.The higher the carrier concentration is,the higher the carrier concentration is,the higher the carrier concentration is,and the higher the carrier concentration is,which makes the Fermi level guide band move,and of the memristor is improved.Finally,the sandwich memristor with Ag/Bi Fe O₃/Cu₂Zn Sn Se₄/FTO structure has been successfully fabricated by magnetron sputtering technology,which has advanced applicability in non-volatile storage.Especially in the dark,ordinary,heating and lighting and other complex environmental conditions on the resistance switching memory behavior of variable resistance ratio and excellent retention performance.Based on the data analysis,a physical mechanism of conductive filament formation induced by interfacial carrier tunneling is proposed to explain the resistance switch memory behavior.This work provides a new method for polymorphic random access memory which can work in a complex environment and has high application value.