Modeling And Experimental Verification Of Force-sensitive Mechanism Of Graphene Pressure Sensor

Graphene and its composite materials became a crucial frontier of international analysis,and have attracted widespread attention because of its glorious electrical properties and twodimensional flat structure.Graphene is very sensitive to the slight changes within the external atmosphere,so it’s used as a sensitive structure for numerous varieties of micro/nano sensors like gas sensors,pressure sensors,and optical sensors.The graphene pressure sensing element may be a comparatively mature micro-nano device supported new materials,new principles and new technologies.However,the force-sensitive mechanism of the graphene pressure sensing element remains within the analysis stage and also the temperature characteristics don’t seem to be nevertheless clear,failing to create associate correct piezoresistance.The model provides theoretical guidance and support to the sensor.The graphene piezoresistive effect is the conversion of external pressure changes into graphene resistance changes.This paper uses finite component simulation to review the nanomechanical properties of graphene films with completely different structures.The tightbinding Hamiltonian model(TB)is used to calculate the energy band distribution,Fermi velocity,and strain coefficient of graphene,and on this basis,the strain is modified to manage the graphene energy band structure,generate a band gap,and explore its energy band distribution,The relationship between Fermi speed and strain.The first-principles code Quantum Atomistix Tool Kit(ATK)was wont to establish AN mechanical device coupling model of strained graphene and simulate the energy band and density of states of graphene beneath completely different strains.Carrier concentration and electron mobility are microscopic factors that affect the change of graphene resistance.The strain-resistance model is obtained by establishing strain-carrier concentration and strain-electron mobility models,and finally the pressure-resistance model is established.The theoretically deduced graphene resistance strain factor is 25.098±0.819.In this paper,two sensors with different structures are designed to verify the graphene piezoresistive model.One is a membrane structure graphene pressure sensor,which uses a heterogeneous boron nitride/graphene/boron nitride thin film suspended on a silica substrate with a microcavity and performs pressure tests to obtain the membrane structure graphene pressure.The sensor resistance strain factor is 33.911±0.02766.This structure has the characteristics of small range and high sensitivity.The second is a beam structure graphene pressure sensor,which uses a heterogeneous film of boron nitride/graphene/boron nitride to be placed at the root of the silicon-based cross beam and tested.The resistance strain factor of the beam structure graphene pressure sensor is 26.378±0.01564.This structure has the characteristics of a large range.The accuracy of the piezoresistive model is verified by two graphene pressure sensors with different structures.In this paper,combining the characteristics of graphene materials,the force-sensitive mechanism of graphene pressure sensors is studied.The piezoresistive model is obtained through theoretical modeling and simulation,and 2 pressure sensors with totally different structures square measure designed to verify the model.Research the process technology of graphene pressure device,style the particular process method of the device and got wind of the piezoresistive impact take a look at platform,and take a look at the piezoresistive impact of the graphene pressure device.It arranged a decent theoretical and technical foundation for the next development of graphene pressure sensors.