Research On Radiation Cumulative Damage Of Bulk Silicon Devices In Single Event Effect Experiments

In the space environment,the internal components of the spacecraft fail due to the radiation effect of high-energy particle,resulting in abnormal or malfunction of the spacecraft.Among them,the single event effect is the most common radiation effect in electronic devices.In the simulation source of single-event effects,heavy ions are the most direct means,but the machine time is limited,and the pulsed laser is widely used for single-event effect sensitivity because of its flexible machine time,no damage to the device to be tested,and convenient operation.When single event effect occurs in an electronic device,its physical properties are degraded,and the physical properties of the device are determined by its microstructure.Therefore,the microscopic morphology of the material must change when the single-event effect occurs.In this paper,using the heavy ion single-event effect experimental device,the bulk silicon device MOSFET is taken as the research object,and the cumulative damage of material irradiation in the single-event effect experiment of MOSFET device is carried out.Due to the limitation of heavy ion machine,the pulsed laser is used to develop the bulk silicon device(PN junction,SRAM)cumulative damage of material irradiation in the single event effect test.According to the interaction between heavy ions and semiconductor materials,this paper studies the cumulative damage of material irradiation during the experiment of heavy ion single event effect with the single MOSFET device as the object.The results show that after the MOSFET device is irradiated with carbon ions of 1×10~8ions/cm~2 fluence,the cumulative damage of the silicon material is radiation,which is the total dose effect,reflected by the decrease of the gate-source threshold voltage.Through the observation of the surface morphology of the damaged device and the analysis of the internal lattice vibration,it is shown that the internal monocrystalline silicon lattice distortion and the formation of part of amorphous silicon lead to a decrease in the gate-source threshold voltage of the MOSFET device.Due to the limitation of the heavy ion machine,the pulsed laser was used to carry out the cumulative damage of the electrons during the single-event effect experiment.According to the interaction between laser and semiconductor materials,this paper studies the cumulative damage of material irradiation in PN junction and SRAM devices during the laser single event effect experiment based on the basic PN junction and complex integrated circuit SRAM devices.The electrical performance test and surface topography analysis of the laser irradiated device show that the accumulated high-energy pulsed laser causes ablation damage on the surface of the chip surface inside the PN junction,SRAM and other electronic devices,and the area of surface electrode is reduced,which influences the device’s normal work.And the higher the pulsed laser energy and the longer the irradiation time,the more serious the electrical performance and the morphology of the device.