| Photocatalytic technology uses solar energy to split water into storable hydrogen.Metal sulfides not only have a narrow band gap that responding to visible light,but also the conductivity,high reaction activity,and environmentally friendly.However,there is highly electron-hole to composite efficiency.In order to break through the bottleneck,this paper first explores the raw material ratio and solvent and then constructs ZnIn2S4/Ni S heterojunction.The specific content is as follows:(1)Use solvothermal method to synthesize ZnIn2S4 semiconductor,use deionized water:absolute ethanol=1:1 as solvent,fix the stoichiometric ratio of zinc source and indium source,increase the input of thioacetamide to synthesize ZnIn2S4 semiconductor.After characterization,it was found that the crystallinity and morphology of ZnIn2S4 changed significantly with the increase of thioacetamide input,and the double excess thioacetamide was the most obvious.In addition,the light absorption range has been significantly broadened,moreover,the bottom of the conduction band change to more negative,so it has a stronger reducing ability,and its photocatalytic hydrogen production rate is greatly increased to 11.55mmol·g-1·h-1.(2)After selecting the appropriate amount of sulfur source input,ZnIn2S4 semiconductor is synthesized by solvothermal method with solvents of different proportions.Through comparison,it is found that due to the different physical properties such as polarity of deionized water and absolute ethanol,the synthesized ZnIn2S4 has obvious crystallinity,microscopic morphology,specific surface area,absorbance and photocatalytic hydrogen production activity.Among them,the mixed solvent system has the best hydrogen production activity and good stability.The ZnIn2S4 synthesized with other solvents also has similar photocatalytic hydrogen production activity two hours before the photocatalysis,but the activity is sharply reduced or even inactivated due to serious photocorrosion.(3)In order to alleviate the photo-corrosion of ZnIn2S4,Ni S was designed to be deposited on the surface of ZnIn2S4 nanosheets.Through characterization,it is found that the synthesized ZnIn2S4/Ni S is more stable than pure ZnIn2S4.The reason is that the band gap position of Ni S is close to the valence band of ZnIn2S4.Therefore,under the action of the built-in electric field,the holes generated in the valence band of ZnIn2S4 migrate to Ni S prevents the oxidation of sulfur on by holes,thereby significantly improving the stability... |