Research On Hole Transport Layer Dopant For Perovskite Solar Cells And Fabrication Of High-performance Devices

In the 21st century,energy shortage and environmental damage are the main issues that hinder the development of human society.In this context,perovskite solar cells（PSCs）have attracted considerable attention due to their excellent performance and low cost.However,in order to realize the commercialization of PSCs,there are still many issues calling for a solution,such as the hindrance of non-radiative recombination to the development of device performance,and the damage of light and oxygen to the stability of PSCs.In this paper,non-radiative recombination of perovskite is the main research object,and the non-radiative recombination in different positions in the PSCs is specifically suppressed through the optimization of the preparation process of perovskite films and the optimization of the charge transport layer to improve the overall device.The specific research content and results are as follows:（1）The data fitting based on time-resolved photoluminescence spectroscopy（TRPL）is furtherly integrated and analyzed,and an effective formula is correctly derived to quantify the percentage of non-radiative recombination losses to the total photogenerated carriers.This work provides guidance and theoretical support for study on suppression of non-radiative recombination.（2）In the process of preparing FAPBI₃ perovskite layer,we controlled the preparation environment,adjusted the preparation method and changed the annealing method.Finally,it is proved that the perovskite film with better performance can be obtained by vacuum treatment,anti-solvent treatment and step annealing treatment in the environment with humidity below 40%.It is also proved that the surface modification of perovskite films with 20 M concentration of phenethylamine iodide can obtain higher performance and better stability.Based on these optimizations,the non-radiative recombination of perovskite has been effectively suppressed.（3）Based on the optimized perovskite layer,the charge transport layer was further doped and modified.In addition to using some widely recognized dopants,we have also introduced other doping materials,including acesulfame K（AK）.For the electron transport layer（ETL）,this paper uses dopants to actively introduce metal ions(K+,Co³⁺,Li+)on the mesoporous titanium dioxide（TiO₂）layer for surface modification to improve the performance of devices.For the hole transport layer（HTL）,a new dopant（AK）was added to the original doping level of the Spiro-OMe TAD-based HTL to suppress the interfacial non-radiative recombination.Finally,the doped PSCs obtained a photoelectric conversion efficiency（PCE）of 21.9%,and has better stability.This paper provides a more convenient method for the study of non-radiation recombination of PSCs and shows a simple and effective strategy for the preparation of more efficient devices.