Control Of Phase Transformation Properties Of Vanadium Dioxide Thin Films By Electron Injection Method

Vanadium dioxide（VO₂）undergoes a remarkable and reversible metal-insulator phase transition around 68℃.This phase transition will cause a jump in the electrical,magnetic and optical properties of VO₂,and has a strong switching effect,such as a sudden change in the infrared transmittance in optics.Therefore,VO₂ has great application potential in the corresponding fields.Different applications require VO₂ films with different metal-insulator properties（MIT）.Doping is the most effective method to tune the MIT phase transition properties of VO₂ thin films,but the presence of these dopants will lead to the degradation of the phase transition properties of VO₂ thin films such as optical and electrical modulation properties,which greatly limits the application of VO₂ thin films.In order to adjust the phase transition temperature without changing the phase transition properties of the VO₂ film,we use a chemical reaction method to control the phase transition temperature of VO₂ by electron injection.Since only the electron injection does little damage to the lattice integrity,it is expected to maintain the phase transition properties of the VO₂ film.In addition,this treatment method has the advantages of low cost and simple operation compared with other methods for regulating the VO₂ phase transition temperature.Based on this first-principles calculation,it is theoretically proved that electron injection can effectively adjust the phase transition temperature of vanadium dioxide.The effectiveness of the method was proved by the experiment of ascorbic acid reaction.